Femtosecond carrier dynamics of low-temperature-grown GaAs observed via Terahertz spectroscopy

1997 ◽  
Author(s):  
S. S. Prabhu ◽  
S. E. Ralph ◽  
M. R. Melloch ◽  
E. S. Harmon
Keyword(s):  
Low Temperature ◽  
Terahertz Spectroscopy ◽  
Carrier Dynamics ◽  
Low Temperature Grown Gaas

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy

2001 ◽  
Vol 90 (3) ◽  
pp. 1303-1306 ◽  
Author(s):  
H. Němec ◽  
A. Pashkin ◽  
P. Kužel ◽  
M. Khazan ◽  
S. Schnüll ◽  
...  
Keyword(s):  
Low Temperature ◽  
Emission Spectroscopy ◽  
Carrier Dynamics ◽  
Terahertz Emission ◽  
Terahertz Emission Spectroscopy ◽  
Low Temperature Grown Gaas

Tailoring of trap-related carrier dynamics in low-temperature-grown GaAs

1997 ◽  
Vol 71 (9) ◽  
pp. 1156-1158 ◽  
Author(s):  
P. W. E Smith ◽  
S. D. Benjamin ◽  
H. S. Loka
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Low Temperature Grown Gaas

Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs

2002 ◽  
Vol 41 (Part 2, No. 6B) ◽  
pp. L706-L709 ◽  
Author(s):  
Masayoshi Tonouchi ◽  
Naohiro Kawasaki ◽  
Takahiro Yoshimura ◽  
Hagen Wald ◽  
Paul Seidel
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Terahertz Generation ◽  
Ultrafast Carrier Dynamics ◽  
Pump And Probe ◽  
Ultrafast Carrier ◽  
Low Temperature Grown Gaas

Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

1999 ◽  
Vol 75 (17) ◽  
pp. 2575-2577 ◽  
Author(s):  
C. Kadow ◽  
S. B. Fleischer ◽  
J. P. Ibbetson ◽  
J. E. Bowers ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Si Substrates ◽  
Gaas On Si ◽  
Low Temperature Grown Gaas
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