U-Grooved Dual-Channel Plasmonic Sensor for Simultaneous Multi-analyte Detection

2021 ◽  
Author(s):  
Abrar Islam ◽  
Firoz Haider ◽  
Rifat Ahmmed Aoni ◽  
Moqbull Hossen ◽  
Feroza Begum ◽  
...  
Keyword(s):  
Plasmonic Sensor ◽  
Dual Channel ◽  
Analyte Detection

Mode-multiplex plasmonic sensor for multi-analyte detection

2020 ◽  
Vol 45 (14) ◽  
pp. 3945 ◽  
Author(s):  
Firoz Haider ◽  
Rifat Ahmmed Aoni ◽  
Rajib Ahmed ◽  
Ghafour Amouzad Mahdiraji ◽  
Mohd Fahmi Azman ◽  
...  
Keyword(s):  
Plasmonic Sensor ◽  
Analyte Detection

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

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