Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 768 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-xGex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n-MOSFET [5]. In this paper, we demonstrate that ε-Si p-MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p-MOSFETs exhibiting mobility enhancements of 10 times. These p-MOSFETs can be integrated on the same wafers as ε-Si n-MOSFETs, making symmetric-mobility CMOS possible.

scholarly journals Strained SI/SIGE/SI Nano-Channel Hoi Mosfet

2019 ◽  
Vol 8 (2S3) ◽  
pp. 1227-1230
Keyword(s):  
Threshold Voltage ◽  
Silicon Germanium ◽  
Ballistic Transport ◽  
Drain Current ◽  
Channel Length ◽  
Strained Silicon ◽  
Short Channel ◽  
Strained Si ◽  
Dual Channel ◽  
Nano Channel

Strained Si technology has headed in the development of single or dual channel strained silicon MOSFETs devices. Comprehending the need of advancement in recent technologies with miniaturized features, developing a novel MOSFET on ultrathin double strained Si with strained SiGe sandwiched in between and forming a tri-channel MOSFET has been the crux of this present research. Incorporation of quantum carrier confinement effect on the ultrathin dual strained Si layers in the channel has been implemented to counterbalance the threshold voltage roll-off induced by the strained layers. A comparison of the conventional strained silicon on relaxed silicon-germanium with double strained silicon channel MOSFET has been perceived leading to eloquent drain current enhancement of ~49% with a small reduction in the threshold voltage caused by the additional bottom strained Si layer. Further, 100nm and 50nm channel length have been compared and a superior device characteristic for the reduced device dimension is attained as the prominence of velocity overshoot is more in short channel device approaching to quasi-ballistic transport in the channel region

Possibility and design of resonant terahertz emitters based on nanoscale strained silicon plasma wave transistors with enhanced mobility

2014 ◽  
Vol 53 (6S) ◽  
pp. 06JE08 ◽  
Author(s):  
Jong Yul Park ◽  
Sung-Ho Kim ◽  
Yang-Kyu Choi ◽  
Songcheol Hong ◽  
Sang-Gug Lee ◽  
...  
Keyword(s):  
Plasma Wave ◽  
Strained Silicon ◽  
Enhanced Mobility ◽  
Terahertz Emitters

scholarly journals Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure

2018 ◽  
Vol 8 (1) ◽  
pp. 421
Author(s):  
Amine Mohammed Taberkit ◽  
Ahlam Guen-Bouazza ◽  
Benyounes Bouazza
Keyword(s):  
Modeling And Simulation ◽  
Threshold Voltage ◽  
Carrier Mobility ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Two Dimensional ◽  
Drive Current ◽  
Dual Channel ◽  
Simulation Results ◽  
Dimensional Simulation

The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate the process and validate the electronic characteristics. Our results allow showing improvements obtained by comparing the three structures and their characteristics. The maximum of carrier mobility improvement is achieved with percentage of 35.29 % and 70.59 % respectively, by result an improvement in drive current with percentage of 36.54 % and 236.71 %, and reduction of leakage current with percentage of 59.45 % and 82.75 %, the threshold voltage is also enhaced with percentage of: 60 % and 61.4%. Our simulation results highlight the importance of incorporating strain technology in MOSFET transistors.

Direct Observation of Valence-Band Mixing in GaAs/GaPAs Strained-Layer Superlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
E. D. Jones ◽  
R. M. Biefeld ◽  
I. J. Fritz ◽  
P. L. Gourley ◽  
G. C. Osbourn ◽  
...  
Keyword(s):  
Valence Band ◽  
Direct Observation ◽  
Experimental Studies ◽  
Biaxial Compression ◽  
Strained Layer ◽  
Mixing Effects ◽  
Strained Layer Superlattice ◽  
Band Mixing ◽  
Valence Bands ◽  
Valence Band Mixing

ABSTRACTLow-temperature magneto-luminescence studies are used to examine the in-plane valence-band dispersion in GaAs/GaPAs strained-layer-superlattice structures. The results provide a direct observation of valence-band mixing effects in strained-layer systems.Theoretical and experimental studies of the effect of valence-band mixing upon the magneto-transport properties and magneto-luminescence data for GaAs/AlGaAs latticed-matched superlattices have been recently reported.[1–] Due to the presence of the 2D-quantum well, the valence-band degeneracy between the light-hole and heavy-hole bands at is removed. These studies show, however, that the lowest energy valence-band mass is still strongly dependent upon due to valence-band mixing. On the other hand, because of the large biaxial compression in strained-layer-super lattices (SLS), valence-band mixing effects should be minimal.[8–9] Recent magneto-transport measurements[10] on p-type InGaAs/GaAs SLS structures have provided information regarding nonparabolic valence-bands in these structures.

Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD

1994 ◽  
Vol 6 (10) ◽  
pp. 1167-1169 ◽  
Author(s):  
R.M. Lammert ◽  
T.M. Cockerill ◽  
D.V. Forbes ◽  
J.J. Coleman
Keyword(s):  
Strained Layer ◽  
Dual Channel ◽  
Selective Area

Piezoresistance in Strained Silicon and Strained Silicon Germanium

2006 ◽  
Vol 958 ◽  
Author(s):  
Jacob Richter ◽  
M. B. Arnoldus ◽  
J. Lundsgaard Hansen ◽  
A. Nylandsted Larsen ◽  
O. Hansen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Experimental Results ◽  
Strained Silicon ◽  
Silicon Substrates ◽  
Temperature Dependency ◽  
Strained Layer

ABSTRACTThis paper presents experimental results of the piezoresistance in p-type tensile strained silicon and compressive strained silicon germanium grown by molecular beam epitaxy (MBE) on (001) silicon substrates. The piezoresistance decreases in a tensile strained layer and increases in a compressive strained layer when compared to the unstrained material. The results show that one can tune the piezoresistance by tuning the strain in the piezoresistor and thus tailor the performance of the device. The obtained results show an increase in the piezoresistance effect of 35% in compressive strained silicon germanium and a decrease in the piezoresistance effect in tensile strained silicon of 24%. Furthermore, the results show that the piezoresistance of a tensile strained silicon crystal has a smaller temperature dependency compared to that of unstrained silicon. The piezoresistance effect decreases by 7% in tensile strained silicon compared to the piezoresistance effect decrease in silicon of 18% when changing the temperature from 30°C to 80°C.

Habitat Association of Klebsiella Species

1985 ◽  
Vol 6 (2) ◽  
pp. 52-58 ◽  
Author(s):  
Susan T. Bagley
Keyword(s):  
Drinking Water ◽  
Gastrointestinal Tract ◽  
Surface Waters ◽  
Industrial Effluents ◽  
Opportunistic Pathogen ◽  
Habitat Associations ◽  
Habitat Association ◽  
Klebsiella Species ◽  
Almost All ◽  
Polluted Waters

AbstractThe genus Klebsiella is seemingly ubiquitous in terms of its habitat associations. Klebsiella is a common opportunistic pathogen for humans and other animals, as well as being resident or transient flora (particularly in the gastrointestinal tract). Other habitats include sewage, drinking water, soils, surface waters, industrial effluents, and vegetation. Until recently, almost all these Klebsiella have been identified as one species, ie, K. pneumoniae. However, phenotypic and genotypic studies have shown that “K. pneumoniae” actually consists of at least four species, all with distinct characteristics and habitats. General habitat associations of Klebsiella species are as follows: K. pneumoniae—humans, animals, sewage, and polluted waters and soils; K. oxytoca—frequent association with most habitats; K. terrigena— unpolluted surface waters and soils, drinking water, and vegetation; K. planticola—sewage, polluted surface waters, soils, and vegetation; and K. ozaenae/K. rhinoscleromatis—infrequently detected (primarily with humans).

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