scholarly journals Monolithically integrated dual-quadrature receiver on InP with 30 nm tunable local oscillator

2011 ◽  
Vol 19 (26) ◽  
pp. B716 ◽  
Author(s):  
Kimchau N. Nguyen ◽  
Phillip J. Skahan ◽  
John M. Garcia ◽  
Erica Lively ◽  
Henrik N. Poulsen ◽  
...  
Author(s):  
Kimchau N. Nguyen ◽  
John M. Garcia ◽  
Erica Lively ◽  
Henrik N. Poulsen ◽  
Douglas M. Baney ◽  
...  

Author(s):  
Hiroshi Ito ◽  
Norihiko Shibata ◽  
Tadao Nagatsuma ◽  
Tadao Ishibashi

Abstract We developed a novel terahertz-wave detector fabricated on a SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred on a SiC substrate, and a waveguide coupler and filters were monolithically integrated with an FMB diode. Then, fabricated detector chip was assembled in a fundamental mixer module with a WR-3 rectangular-waveguide input port. It exhibited a minimum noise equivalent power as low as 3e-19 W/Hz at around 300 GHz for a local oscillator power of only 30 microwatts.


1987 ◽  
Vol 48 (C7) ◽  
pp. C7-569-C7-571
Author(s):  
A. DELAHAIGUE ◽  
D. COURTOIS ◽  
C. THIEBEAUX ◽  
H. LE CORRE

1990 ◽  
Vol 26 (14) ◽  
pp. 1013
Author(s):  
M.-S. Kao ◽  
J. Wu

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata

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