scholarly journals Enhanced terahertz radiation from InAs (100) with an embedded InGaAs hole blocking layer

2020 ◽  
Vol 28 (18) ◽  
pp. 25750
Author(s):  
Changkun Song ◽  
Peng Wang ◽  
Yinping Qian ◽  
Guofu Zhou ◽  
Richard Nötzel
Keyword(s):  
Terahertz Radiation ◽  
Blocking Layer ◽  
Hole Blocking Layer

Blue-emitting organic EL devices with a hole blocking layer

2000 ◽  
Vol 111-112 ◽  
pp. 25-29 ◽  
Author(s):  
Y. Sato ◽  
S. Ichinosawa ◽  
T. Ogata ◽  
M. Fugono ◽  
Y. Murata
Keyword(s):  
Blocking Layer ◽  
Hole Blocking Layer

Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes

2017 ◽  
Vol 214 (10) ◽  
pp. 1700320
Author(s):  
Yao Xing ◽  
De Gang Zhao ◽  
De Sheng Jiang ◽  
Xiang Li ◽  
Feng Liang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blocking Layer ◽  
Ultraviolet Laser ◽  
Near Ultraviolet ◽  
Hole Blocking Layer

Enhanced Efficiency and Stability in P3HT:PCBM Bulk Heterojunction Solar Cell by using TiO2 Hole Blocking Layer

2006 ◽  
Vol 965 ◽  
Author(s):  
Osamu Yoshikawa ◽  
Akinobu Hayakawa ◽  
Takuya Fujieda ◽  
Kaku Uehara ◽  
Susumu Yoshikawa
Keyword(s):  
Active Layer ◽  
Bulk Heterojunction ◽  
Negative Electrode ◽  
Blocking Layer ◽  
Bulk Heterojunction Solar Cell ◽  
Hole Blocking Layer ◽  
Solar Conversion ◽  
Physical And Chemical ◽  
Parallel Resistance ◽  
Solar Conversion Efficiency

ABSTRACTInsertion of TiO2 layer between Al negative electrode and active layer of bulk-heterojunction gave a high solar conversion efficiency and high stability. The TiO2 layer was prepared by spin-coating titanium(IV)isopropoxide (Ti(OC3H7)4) on active layer of blended P3HT:PCBM. The parallel resistance (Rp) is increased by inserting TiO2 layer leading to an increase in Voc. The TiO2 layer works as a hole blocking layer and prevents the physical and chemical damages by the direct contact between P3HT:PCBM active layer and Al electrode resulting in improvement of the parallel resistance and rectification. The efficiency of P3HT:PCBM bulk heterojunction cell with TiO2 hole blocking layer attained 4.05% with a Isc 9.72 mA/cm2, Voc 0.60 V, and FF 0.70 by using optimized TiO2 film thickness and ratio of P3HT:PCBM condition.

scholarly journals Efficient hole-blocking layer-free planar halide perovskite thin-film solar cells

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Weijun Ke ◽  
Guojia Fang ◽  
Jiawei Wan ◽  
Hong Tao ◽  
Qin Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Blocking Layer ◽  
Hole Blocking Layer ◽  
Halide Perovskite

High performance polythiophene/fullerene bulk-heterojunction solar cell with a TiOx hole blocking layer

2007 ◽  
Vol 90 (16) ◽  
pp. 163517 ◽  
Author(s):  
Akinobu Hayakawa ◽  
Osamu Yoshikawa ◽  
Takuya Fujieda ◽  
Kaku Uehara ◽  
Susumu Yoshikawa
Keyword(s):  
Solar Cell ◽  
High Performance ◽  
Bulk Heterojunction ◽  
Heterojunction Solar Cell ◽  
Blocking Layer ◽  
Bulk Heterojunction Solar Cell ◽  
Hole Blocking Layer

scholarly journals Suppression of Leakage Current in Proton-Conducting BaZr0.8Y0.2O3−δ Electrolyte by Forming Hole-Blocking Layer

2020 ◽  
Vol 167 (8) ◽  
pp. 084515
Author(s):  
Yoshio Matsuzaki ◽  
Yuya Tachikawa ◽  
Yoshitaka Baba ◽  
Koki Sato ◽  
Gen Kojo ◽  
...  
Keyword(s):  
Leakage Current ◽  
Blocking Layer ◽  
Proton Conducting ◽  
Hole Blocking Layer

scholarly journals Enhanced Performance of Perovskite Single-Crystal Photodiodes by Epitaxial Hole Blocking Layer

2020 ◽  
Vol 8 ◽  
Author(s):  
Yuzhu Pan ◽  
Xin Wang ◽  
Yubing Xu ◽  
Yuwei Li ◽  
Elias Emeka Elemike ◽  
...  
Keyword(s):  
Single Crystal ◽  
Blocking Layer ◽  
Hole Blocking Layer
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