Enhanced Performance of Perovskite Single-Crystal Photodiodes by Epitaxial Hole Blocking Layer

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

MRS Proceedings ◽

10.1557/proc-564-117 ◽

1999 ◽

Vol 564 ◽

Cited By ~ 3

Author(s):

S. Ohmi ◽

R. T. Tung

Keyword(s):

Single Crystal ◽

Epitaxial Growth ◽

Diffusion Barrier ◽

Blocking Layer ◽

Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

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Blue-emitting organic EL devices with a hole blocking layer

Synthetic Metals ◽

10.1016/s0379-6779(99)00407-5 ◽

2000 ◽

Vol 111-112 ◽

pp. 25-29 ◽

Cited By ~ 16

Author(s):

Y. Sato ◽

S. Ichinosawa ◽

T. Ogata ◽

M. Fugono ◽

Y. Murata

Keyword(s):

Blocking Layer ◽

Hole Blocking Layer

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Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes

physica status solidi (a) ◽

10.1002/pssa.201700320 ◽

2017 ◽

Vol 214 (10) ◽

pp. 1700320

Author(s):

Yao Xing ◽

De Gang Zhao ◽

De Sheng Jiang ◽

Xiang Li ◽

Feng Liang ◽

...

Keyword(s):

Laser Diodes ◽

Blocking Layer ◽

Ultraviolet Laser ◽

Near Ultraviolet ◽

Hole Blocking Layer

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Enhanced Efficiency and Stability in P3HT:PCBM Bulk Heterojunction Solar Cell by using TiO2 Hole Blocking Layer

MRS Proceedings ◽

10.1557/proc-0965-s11-04 ◽

2006 ◽

Vol 965 ◽

Author(s):

Osamu Yoshikawa ◽

Akinobu Hayakawa ◽

Takuya Fujieda ◽

Kaku Uehara ◽

Susumu Yoshikawa

Keyword(s):

Active Layer ◽

Bulk Heterojunction ◽

Negative Electrode ◽

Blocking Layer ◽

Bulk Heterojunction Solar Cell ◽

Hole Blocking Layer ◽

Solar Conversion ◽

Physical And Chemical ◽

Parallel Resistance ◽

Solar Conversion Efficiency

ABSTRACTInsertion of TiO2 layer between Al negative electrode and active layer of bulk-heterojunction gave a high solar conversion efficiency and high stability. The TiO2 layer was prepared by spin-coating titanium(IV)isopropoxide (Ti(OC3H7)4) on active layer of blended P3HT:PCBM. The parallel resistance (Rp) is increased by inserting TiO2 layer leading to an increase in Voc. The TiO2 layer works as a hole blocking layer and prevents the physical and chemical damages by the direct contact between P3HT:PCBM active layer and Al electrode resulting in improvement of the parallel resistance and rectification. The efficiency of P3HT:PCBM bulk heterojunction cell with TiO2 hole blocking layer attained 4.05% with a Isc 9.72 mA/cm2, Voc 0.60 V, and FF 0.70 by using optimized TiO2 film thickness and ratio of P3HT:PCBM condition.

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