Condensation of Non-Equilibrium Charge Carriers in Semiconductors

1972 ◽  
pp. 385-410
Author(s):  
Ya. Pokkovskh
Keyword(s):  
Charge Carriers ◽  
Equilibrium Charge ◽  
Non Equilibrium

Relaxation of non-equilibrium charge carriers in the hopping regime

2004 ◽  
Vol 241 (1) ◽  
pp. 13-19 ◽  
Author(s):  
O. Bleibaum ◽  
E. Haba ◽  
H. Böttger ◽  
V. V. Bryksin
Keyword(s):  
Charge Carriers ◽  
Equilibrium Charge ◽  
Non Equilibrium

Temperature depopulation of the GeSi/Si quantum dots with non-equilibrium charge carriers

2017 ◽  
Vol 107 ◽  
pp. 228-233 ◽  
Author(s):  
A.N. Sofronov ◽  
L.E. Vorobjev ◽  
D.A. Firsov ◽  
R.M. Balagula ◽  
A.A. Tonkikh
Keyword(s):  
Quantum Dots ◽  
Charge Carriers ◽  
Equilibrium Charge ◽  
Si Quantum Dots ◽  
Non Equilibrium

Luminescence of quasi-2DEG in heterostructures based on PbS films

2001 ◽  
Vol 692 ◽  
Author(s):  
G. Khlyap
Keyword(s):  
Space Charge ◽  
Zinc Selenide ◽  
Space Charge Region ◽  
Lead Sulfide ◽  
Electron System ◽  
Charge Carriers ◽  
Band Diagram ◽  
Equilibrium Charge ◽  
Wide Gap ◽  
Non Equilibrium

AbstractThe paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 μm thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated.

Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 632-635 ◽  
Author(s):  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Vladimir A. Ilyin ◽  
Alexey F. Kardo-Sysoev ◽  
Victor V. Luchinin ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Charge Carriers ◽  
Effect Of Temperature ◽  
Drift Region ◽  
Injection Level ◽  
Effective Lifetime ◽  
Equilibrium Charge ◽  
Recombination Processes ◽  
Non Equilibrium

In this paper we report on the effect of temperature and injection level on the effective lifetime of non-equilibrium charge carriers in p-base of 4H-SiC PiN diodes. Studies were carried out on 1kV drift step recovery diodes (DSRDs) with p+-p--n+. The lifetime of non-equilibrium charge carriers in 4H-SiC p+-p--n+ structures increases by an average of 6 times from 250ns to 1.4μs with the increase of the samples temperature from 300K to 673K. However, increase of the injection level in the drift region from 2.3·1016cm-3 to 5.9·1016cm-3 does not affect the lifetime indicating that Shockley-Read-Hall recombination processes are dominating.

Anomalous in-plane drift and diffusion of non-equilibrium charge carriers in n-i-p-i doping superlattices

1990 ◽  
Vol 228 (1-3) ◽  
pp. 500-503 ◽  
Author(s):  
H. Lin ◽  
K.H. Gulden ◽  
P. Hilbig ◽  
P. Kiesel ◽  
P. Riel ◽  
...  
Keyword(s):  
Charge Carriers ◽  
Equilibrium Charge ◽  
And Diffusion ◽  
Non Equilibrium

The role of non-equilibrium charge carriers in thermoelectric cooling

2013 ◽  
Vol 114 (3) ◽  
pp. 033704 ◽  
Author(s):  
Yu. G. Gurevich ◽  
J. E. Velázquez-Pérez
Keyword(s):  
Charge Carriers ◽  
Thermoelectric Cooling ◽  
Equilibrium Charge ◽  
Non Equilibrium
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