Ultra-weak emission and microcurrents instabilities in blue GaN LEDs at different stages of degradation

It is found that the ultra-weak luminescence observed in microcurrents mode in blue GaN LEDs with multiple quantum wells is due to tunnel-recombination processes with the participation of defect states and local potential wells of various depths, which arise as a result of planar fluctuations of indium in the InGaN layers of the active region. Digital photographs were obtained and patterns of ultra-weak luminescence of the surface of LED crystals were analyzed. It is shown that the patterns of luminescence, along with the current-voltage characteristic, demonstrate significant changes after testing even at the initial stages of degradation, which indicates a high sensitivity of these parameters to degradation processes and the possibility of their use in diagnostic and non-destructive testing methods.

Simultaneous measurement of photocurrent and recombination emission in organic solar cell

Charge transfer (CT) state is a key intermediate to understand recombination processes in organic solar cells (OSCs). In this study, we measured the recombination emission from the CT state under different applied voltages in OSCs and a photocurrent density flowing on the circuit simultaneously. We proposed a “photoluminescence (PL)–voltage (V) plot” that is the voltage dependence of PL intensity of the CT state. The PL–V plot includes information only from the CT state recombination at the donor/acceptor interface and is complementary to the “current density (J)–V plot” that is the most important information for evaluating OSCs. The results demonstrated that fill factor (FF) of the PL–V plot is higher than that of the J-V plot, predicting the ideal FF of the device. Our result demonstrated that the simultaneous measurement of photocurrent and recombination emission could be a strong tool for evaluating photoconversion characteristics in OSCs.

Anisotropic Optical and Vibrational Properties of GeS

The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature (T = 5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding emission is dominated by the disorder/impurity- and/or phonon-assisted recombination processes. Both the RC and PL spectra are found to be linearly polarized along the armchair direction. The measured RS spectra over a broad range from 5 to 300 K consist of six Raman peaks identified with the help of Density Functional Theory (DFT) calculations: Ag1, Ag2, Ag3, Ag4, B1g1, and B1g2, which polarization properties are studied under four different excitation energies. We found that the polarization orientations of the Ag2 and Ag4 modes under specific excitation energy can be useful tools to determine the GeS crystallographic directions: armchair and zigzag.

B2.5-Eunomia simulations of Magnum-PSI detachment experiments: II. Collisional processes and their relevance

Detachment is achieved in Magnum-PSI by increasing the neutral background pressure in the target chamber using gas puffing. The plasma is studied using the B2.5 multi fluid plasma code B2.5 coupled with Eunomia, a Monte Carlo solver for neutral species. This study focuses on the effect of increasing neutral background pressure to the plasma volumetric loss of particle, momentum and energy. The plasma particle and energy loss almost linearly scale with the increase of neutral background pressure, while the momentum loss does not scale as strongly. Plasma recombination processes include molecular activated recombination (MAR), dissociative attachment, and atomic recombination. Atomic recombination, which includes radiative and three-body recombination, is the most relevant plasma process in reducing the particle flux and, consequently, the heat flux to the target. The low temperature where atomic recombination becomes dominant is achieved by plasma cooling via elastic H+-H2 collisions. The transport of vibrationally excited H2 molecules out of the plasma serves as an additional electron cooling channel with relatively small contribution. Additionally, the transport of highly vibrational H2 has a significant impact in reducing the effective MAR and dissociative attachment collision rates and should be considered properly. The relevancy of MAR and atomic recombination occupy separate electron temperature regimes, respectively, at Te = 1.5 eV and Te = 0.3 eV, with dissociative attachment being relevant in the intermediary. Plasma cooling via elastic H+-H2 collisions is effective at Te ≤ 1 eV.

A Novel Spo11 Homologue Functions as a Positive Regulator in Cyst Differentiation in Giardia lamblia

Giardia lamblia persists in a dormant state with a protective cyst wall for transmission. It is incompletely known how three cyst wall proteins (CWPs) are coordinately synthesized during encystation. Meiotic recombination is required for sexual reproduction in animals, fungi, and plants. It is initiated by formation of double-stranded breaks by a topoisomerase-like Spo11. It has been shown that exchange of genetic material in the fused nuclei occurs during Giardia encystation, suggesting parasexual recombination processes of this protozoan. Giardia possesses an evolutionarily conserved Spo11 with typical domains for cleavage reaction and an upregulated expression pattern during encystation. In this study, we asked whether Spo11 can activate encystation process, like other topoisomerases we previously characterized. We found that Spo11 was capable of binding to both single-stranded and double-stranded DNA in vitro and that it could also bind to the cwp promoters in vivo as accessed in chromatin immunoprecipitation assays. Spo11 interacted with WRKY and MYB2 (named from myeloblastosis), transcription factors that can activate cwp gene expression during encystation. Interestingly, overexpression of Spo11 resulted in increased expression of cwp1-3 and myb2 genes and cyst formation. Mutation of the Tyr residue for the active site or two conserved residues corresponding to key DNA-binding residues for Arabidopsis Spo11 reduced the levels of cwp1-3 and myb2 gene expression and cyst formation. Targeted disruption of spo11 gene with CRISPR/Cas9 system led to a significant decrease in cwp1-3 and myb2 gene expression and cyst number. Our results suggest that Spo11 acts as a positive regulator for Giardia differentiation into cyst.

Anisotropic Optical And Vibrational Properties Of GeS

The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature (T=5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding emission is dominated by the disorder/impurity- and/or phonon-assisted recombination processes. Both the RC and PL spectra are found to be linearly polarized along the armchair direction. The low and room (T=300 K) temperature RS spectra consist of six Raman peaks identified with the help of Density Fuctional Theory (DFT) calculations: Ag1, Ag2, Ag3, Ag4, B1g1, and B1g2, which polarization properties are studied under four different excitation energies. We found that the polarization orientations of the Ag2 and Ag4 modes under specific excitation energy can be useful tools to determine the GeS crystallographic directions: armchair and zigzag.

Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals

The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities.