Thermoelectromotive Force

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of Si was put forward. The dependence of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

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Measurement of Semiconductor Silicon Wafer’s Doping Concentration and it’s Uniformity Based on Thermo-Needles Method

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.239-240.726 ◽

2012 ◽

Vol 239-240 ◽

pp. 726-729

Author(s):

Qiao Liang Wang ◽

Yu Zhao ◽

Rui Feng Lv ◽

Yan Yan Zhu

Keyword(s):

Carrier Concentration ◽

Silicon Wafer ◽

Doping Concentration ◽

Semiconductor Industry ◽

Semiconductor Material ◽

New Method ◽

Theoretical Computation ◽

Thermoelectromotive Force ◽

Semiconductor Silicon ◽

Hot Probe

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of silicon wafer was put forward. The dependen curve of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. With the help of Origin software, slope of curve was obtained.Accoeding to related formula,the doping concentartion and it’s uniformity were figured out finally .Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

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Effect of Tension on Change of Resistance and Thermoelectromotive Force by Transverse Magnetization

Physical Review ◽

10.1103/physrev.22.58 ◽

1923 ◽

Vol 22 (1) ◽

pp. 58-65 ◽

Cited By ~ 1

Author(s):

Alpheus W. Smith

Keyword(s):

Transverse Magnetization ◽

Thermoelectromotive Force

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Basic study of high Tc superconducting magnet excited by thermoelectromotive force

Cryogenics ◽

10.1016/s0011-2275(03)00165-6 ◽

2003 ◽

Vol 43 (10-11) ◽

pp. 571-574

Author(s):

Michitaka Ono ◽

Toru Kuriyama ◽

Junji Ueda ◽

Tetsuji Okamura

Keyword(s):

Superconducting Magnet ◽

Basic Study ◽

High Tc ◽

Thermoelectromotive Force

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Influence of nitrogen on the tendency to packing defect formation and the temperature dependence of the thermoelectromotive force in Fe-Cr alloys

Technical Physics Letters ◽

10.1134/1.1262704 ◽

1999 ◽

Vol 25 (12) ◽

pp. 992-993 ◽

Cited By ~ 1

Author(s):

L. M. Kaputkina ◽

V. V. Sumin ◽

K. O. Bazaleeva

Keyword(s):

Temperature Dependence ◽

Defect Formation ◽

Packing Defect ◽

Thermoelectromotive Force

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The thermoelectric performance of silicon carbide semiconductor made from rice hull

MRS Proceedings ◽

10.1557/proc-410-77 ◽

1995 ◽

Vol 410 ◽

Author(s):

E. Maed A ◽

M. Komatsu

Keyword(s):

Silicon Carbide ◽

Porous Silicon ◽

Thermoelectric Properties ◽

Rice Hull ◽

Nitrogen Gas ◽

Porous Silicon Carbide ◽

Thermoelectromotive Force ◽

Type Semiconductor ◽

Carbide Ceramics ◽

Silicon Carbide Ceramics

ABSTRACTThermoelectric properties (Thermoelectromotive force and electrical conductivity) of porous silicon carbide ceramics are evaluated. Porous silicon carbide ceramics are made from rice hull by reacting silica and carbon, both of which are included in rice hull, using hotpressing method[1].When nitrogen gas is used as enviromental gas for hotpressing, this material becomes n-type semiconductor. It shows comparably high themoelectromotive force. Thermoelectric properties of this material change with the processing conditions.The relationship between thermoelectric properties and microstructure is also evaluated.

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