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2022 ◽  
Vol 275 ◽  
pp. 125237
Author(s):  
Samah Al-Qaisi ◽  
Malak Azmat Ali ◽  
Tahani A. Alrebdi ◽  
Tuan V. Vu ◽  
Manal Morsi ◽  
...  

2022 ◽  
Vol 2155 (1) ◽  
pp. 012014
Author(s):  
A V Gurskaya ◽  
V I Chepurnov ◽  
M V Dolgopolov ◽  
G V Puzyrnaya ◽  
I A Petenko

Abstract The authors consider their own CVD technology for the SiC growing on a Si substrate in order to create a beta converter. Since the beta converter contains a heavy C-14 atom, the finished beta converter works as an ”inner sun”, and the structure has specific mark * in the name: SiC*/Si. Authors focus on the problems of the theoretical description of: 1) the growth of the SiC*/Si film (with C-14 atoms inside) and the position of the p-n junction in the doping process; 2) method of a placement radioisotopes into a semiconductor material; 3) physical properties of radioisotopes; 4) defects formation; 5) generation of secondary electrons in the region of the p-n junction.


Mathematics ◽  
2022 ◽  
Vol 10 (1) ◽  
pp. 121
Author(s):  
Aatef Hobiny ◽  
Ibrahim Abbas ◽  
Marin Marin

This article focuses on the study of redial displacement, the carrier density, the conductive and thermodynamic temperatures and the stresses in a semiconductor medium with a spherical hole. This study deals with photo-thermoelastic interactions in a semiconductor material containing a spherical cavity. The new hyperbolic theory of two temperatures with one-time delay is used. The internal surface of the cavity is constrained and the density of carriers is photogenerated by a heat flux at the exponentially decreasing pulse boundaries. The analytical solutions by the eigenvalues approach under the Laplace transformation approaches are used to obtain the solution of the problem and the inversion of the Laplace transformations is performed numerically. Numerical results for semiconductor materials are presented graphically and discussed to show the variations of physical quantities under the present model.


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