Measurement of Semiconductor Silicon Wafer’s Doping Concentration and it’s Uniformity Based on Thermo-Needles Method

2012 ◽  
Vol 239-240 ◽  
pp. 726-729
Author(s):  
Qiao Liang Wang ◽  
Yu Zhao ◽  
Rui Feng Lv ◽  
Yan Yan Zhu
Keyword(s):  
Carrier Concentration ◽  
Silicon Wafer ◽  
Doping Concentration ◽  
Semiconductor Industry ◽  
Semiconductor Material ◽  
New Method ◽  
Theoretical Computation ◽  
Thermoelectromotive Force ◽  
Semiconductor Silicon ◽  
Hot Probe

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of silicon wafer was put forward. The dependen curve of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. With the help of Origin software, slope of curve was obtained.Accoeding to related formula,the doping concentartion and it’s uniformity were figured out finally .Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

Measurement of Carrier Concentration of Si by One Pair of Hot and Cold Needles

2011 ◽  
Vol 421 ◽  
pp. 107-109
Author(s):  
Yu Zhao ◽  
Yan Yan Zhu
Keyword(s):  
Carrier Concentration ◽  
Semiconductor Industry ◽  
Semiconductor Material ◽  
New Method ◽  
Theoretical Computation ◽  
Thermoelectromotive Force ◽  
Hot Probe

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of Si was put forward. The dependence of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method

2016 ◽  
Vol 858 ◽  
pp. 57-60 ◽  
Author(s):  
Zhen Jiang Wang ◽  
Takahiko Kawaguchi ◽  
Kenta Murayama ◽  
Kenta Aoyagi ◽  
S. Harada ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Surface Morphology ◽  
Carrier Concentration ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Solution Method ◽  
Peak Frequency ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
View Point

We investigated the spatial distribution of carrier concentration in n-type 4H-SiC grown by the solution method from the peak frequency of the longitudinal optical phonon-plasmon coupled (LOPC) mode of the Raman spectra on the surface. The carrier concentration at the position of the smooth terrace was higher than the carrier concentration at the position where the macrosteps were formed. This indicates the nitrogen incorporation efficiently occurs on the smooth surface where the density of macrosteps is relatively low. The different incorporation of nitrogen depending on the surface morphology can be understood from the view point of the adsorption time of impurity on the terrace. The present result implies that the uniform surface morphology is necessary to achieve uniform doping concentration in SiC crystal.

New method of fabricating silicon wafer for the photovoltaic application based on sintering and recrystallization steps

2012 ◽  
Vol 359 ◽  
pp. 92-98 ◽  
Author(s):  
P. Bellanger ◽  
A. Sow ◽  
M. Grau ◽  
A. Augusto ◽  
J.M. Serra ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
New Method ◽  
Photovoltaic Application

Bipolar structure of carrier concentration in hydrogen pre-annealing Czochralski silicon wafer

2003 ◽  
Vol 340-342 ◽  
pp. 601-604
Author(s):  
Xuegong Yu ◽  
Deren Yang ◽  
Ruixin Fan ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Carrier Concentration ◽  
Silicon Wafer ◽  
Bipolar Structure ◽  
Czochralski Silicon

Thermoelectric Mapping of Nanostructures

2002 ◽  
Author(s):  
Ho-Ki Lyeo ◽  
C. K. Ken Shih ◽  
Uttam Ghoshal ◽  
Li Shi
Keyword(s):  
Carrier Concentration ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Semiconductor Nanostructures ◽  
Semiconductor Processing ◽  
Strained Si ◽  
Wide Range ◽  
Impurity Doped ◽  
Processing Techniques ◽  
Made In

There is intense interest to develop nanowires [1] and superlattices [2] that may offer superior thermoelectric figure of merit for efficient energy conversion. Meanwhile, the advance of semiconductor processing techniques has yielded impurity-doped semiconductor nanostructures with a doped region as small as a few nanometers. These include shallow junction Si field-effect transistors, strained Si/SiGe/Ge heterostructures and quantum dots, III-V heterostructures, and doped nanowires and nanotubes. Due to various size confinement effects, these doped semiconductor nanostructures often have unique electrical, optoelectronic, or thermoelectric properties that may lead to a wide range of applications. In contrast to the progress made in synthesizing thermoelectric nanostructures and in fabricating doped semiconductor nanostructures, the ability to quantify thermoelectric property and carrier concentration in comparable length scale has been lagging behind. For example, the 1997 U.S. Roadmap of Semiconductors from the Semiconductor Industry Association (SIA) defines the need for nanometer-scale measurements of carrier concentration profiles [3]. Though progress has been made, currently no technique can satisfy the requirements posted by the SIA roadmap due to the lack of either spatial resolution or accuracy.

Doping Profile Measurements in a 65-nm Commercial Product Using Atom Probe Tomography

2008 ◽  
Author(s):  
Lev Klibanov ◽  
Dick James ◽  
Dieter Isheim
Keyword(s):  
Spatial Resolution ◽  
Atom Probe Tomography ◽  
Doping Concentration ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Doping Profile ◽  
Commercial Product ◽  
Microscopy Technique ◽  
Compositional Information

Abstract Doping profile measurements in extremely small features like transistor gates or source/drain regions is a challenging task for the semiconductor industry. In our article, we successfully used an atom probe tomography (APT) tool to measure the doping concentration and profile of the dopant elements in a commercial 65 nm product. APT not only delivers doping concentrations but also gives the highest spatial resolution (sub-1 nm) three-dimensional compositional information of any microscopy technique.

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