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Author(s):  
Johannes Fiedler ◽  
Bodil Holst

Abstract Fast, large area patterning of arbitrary structures down to the nanometre scale is of great interest for a range of applications including the semiconductor industry, quantum electronics, nanophotonics and others. It was recently proposed that nanometre-resolution mask lithography can be realised by sending metastable helium atoms through a binary holography mask consisting of a pattern of holes. However, these first calculations were done using a simple scalar wave approach, which did not consider the dispersion force interaction between the atoms and the mask material. To access the true potential of the idea, it is necessary to access how this interaction affects the atoms. Here we present a theoretical study of the dispersion force interaction between an atom and a dielectric membrane with a hole. We look at metastable and ground state helium, using experimentally realistic wavelengths (0.05-1 nm) and membrane thicknesses (5-50 nm). We find that the effective hole radius is reduced by around 1-7 nm for metastable helium and 0.5-3.5 nm for ground-state helium. As expected, the reduction is largest for thick membranes and slow atoms.


2022 ◽  
Author(s):  
Bensaid Djillali ◽  
Doumi Bendouma ◽  
Sohail Ahmad

Abstract Cobalt -rich Heusler compounds represent a very interesting family among Heusler alloys due to their performance in the field of spintronics and magnetic devices. The quaternary Heusler created by swapping of an anti-atom site by an alkali element improves the performance of physical properties for new applications. In this study, the electronic structures and magnetic properties before and after swapping cobalt (Co) by lithium (Li) in the Co2NbAl compound have been investigated using first-principle computational calculations. Our findings revealed that the swapping Co antisite by Li keeps the half-metallic character in the CoLiNbAl. Analysis of band structures show that ternary Heusler compound is ferromagnetic half-metallic with half metallic gap (band gap in minority channel ) equal 0.134 eV but the swapping Co with Li leads the material to change its behavior and becomes a semiconductor with a gap equal 1.043 eV using HSE06 approach. The results of optical and thermoelectric properties such as absorption coefficient, reflectivity or thermopower and figure of merit are very interesting in the optoelectronic field and encourages the researchers to realize photovoltaic cell and thermoelectric generator with a higher efficiency. These interesting features suggest that Co2NbAl and LiNbAlCo Heusler compounds could be good candidates for applications of antiferromagnetic spintronics and optoelectronics in commercial semiconductor industry.


2022 ◽  
Vol 25 (3) ◽  
pp. 12-17
Author(s):  
Rakesh Kumar

I believe that the Internet of Tiny Things (IoTT) will be the next big driver of the computing and semiconductor industry - imagine applications such as smart city, home sensors, wearables, implantables, single-use electronic tags for pharmaceuticals and produce, and more. Trillions of tiny devices may be needed every year to enable these applications, while meeting extreme requirements in terms of cost (sometimes only a few cents), power (often self-powered), and trust (often physically accessible and producing sensitive data). Our research over last few years has been focused on enabling an internet of these tiny things by addressing the unique cost, power, and trust challenges of these devices.


2022 ◽  
Author(s):  
Jongsu Seo ◽  
Seunghyun Kim ◽  
SungHyun Jeon ◽  
Suyeon Kim ◽  
Jeong Hwan Kim ◽  
...  

Atomic layer deposition (ALD), which is already actively used in the semiconductor industry, has been in the spotlight in various energy fields, such as batteries and fuel cells, given its...


2022 ◽  
Author(s):  
Eunji Ji ◽  
Jong Hun Kim ◽  
Wanggon Lee ◽  
June-Chul Shin ◽  
Hyungtak Seo ◽  
...  

Transition metal dichalcogenides (TMDs) are promising candidates for semiconductor industry owing to their superior electrical properties. Their surface oxidation is of interest because their electrical properties can be easily modulated...


Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 243
Author(s):  
Mirko Poljak ◽  
Mislav Matić

Nanodevices based on monolayer black phosphorus or phosphorene are promising for future electron devices in high density integrated circuits. We investigate bandstructure and size-scaling effects in the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors (FETs) using advanced theoretical and computational approaches. Material and device properties are obtained by non-equilibrium Green’s function (NEGF) formalism combined with a novel tight-binding (TB) model fitted on ab initio density-functional theory (DFT) calculations. We report significant changes in the dispersion, number, and configuration of electronic subbands, density of states, and transmission of PNRs with nanoribbon width (W) downscaling. In addition, the performance of PNR FETs with 15 nm-long channels are self-consistently assessed by exploring the behavior of charge density, quantum capacitance, and average charge velocity in the channel. The dominant consequence of W downscaling is the decrease of charge velocity, which in turn deteriorates the ON-state current in PNR FETs with narrower nanoribbon channels. Nevertheless, we find optimum nanodevices with W > 1.4 nm that meet the requirements set by the semiconductor industry for the “3 nm” technology generation, which illustrates the importance of properly accounting bandstructure effects that occur in sub-5 nm-wide PNRs.


2021 ◽  
Vol 83 (4) ◽  
pp. 111-119
Author(s):  
Nor Aznan Mohd Nor ◽  

The impact of COVID-19 pandemic to manufacturing companies has been horrendous that panic attack has occurred among the companies, as well as semiconductor companies. Many companies have been declared bankrupt due to this pandemic and a new normal have been born such as remote working, following by certain Standard Operating Procedures (SOPs) implemented by the government to avoid infection of this COVID-19 virus and practice social distancing at the workplace. Apart from the new normal, there are some effects to the semiconductor companies in a way that could present a negative impact to the future of the companies. There are some drastic measures being implemented to adapt with the new normal as well as keeping the production running as usual. The main motive of analyzing the current situation is to avoid complete down fall of production of semiconductor companies which may affect the global economy.


2021 ◽  
Author(s):  
Nagendra Prasad Yadav ◽  
Guozhen Hu ◽  
Yi-Fan Wang

Abstract Recently there has been an increasing demand for terahertz technology especially in imaging. In the past few decades, the applications of terahertz (THz) imaging technology have seen significant developments in the fields of biology, medical diagnosis, food safety, and nondestructive testing. The medical and semiconductor industry has always attracted significant attention worldwide. In particular, the importance of real and perfect inspection technologies has been growing due to an increasing demand for improving the quality of life and developing industries. This paper presents the research of THz technology with super-resolution THz imaging in transmission mode on four types of different samples. We have reported transmission measurement at different THz frequency of each sample. The butterfly sample used super-resolution THz imaging. The THz super-resolution is obtained excellent at 1.8 THz, it is near about 1 micrometer. A good resolution images have been obtained. This new THz super-resolution techniques can apply in medical and security purposes. Further applications will be reported in coming papers.


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