Ein Ionen-Laser für metrologische Anwendungen

Zeitschrift für Naturforschung A ◽

10.1515/zna-1970-0129 ◽

1970 ◽

Vol 25 (1) ◽

pp. 156

Author(s):

E. Engelhard ◽

F. Spieweck

Keyword(s):

Vapour Pressure ◽

Pressure Controlled

Abstract A xenon isotop laser has been built which emits Xe(II)-lines in the visible. The vapour pressure controlled laser tube operates at low current. Preliminary vacuum wavelength values have been found to be (542.065 49±0.000 02) nm and (627.254 64±0.000 01) nm.

Download Full-text

Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2003.07.022 ◽

2003 ◽

Vol 6 (5-6) ◽

pp. 303-306 ◽

Author(s):

F.-M. Kiessling ◽

M. Neubert ◽

P. Rudolph ◽

W. Ulrici

Keyword(s):

Vapour Pressure ◽

Pressure Controlled

Download Full-text

Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)

Progress in Crystal Growth and Characterization of Materials ◽

10.1016/s0960-8974(01)00005-5 ◽

2001 ◽

Vol 43 (2-3) ◽

pp. 119-185 ◽

Author(s):

M. Neubert ◽

P. Rudolph

Keyword(s):

Low Temperature ◽

Vapour Pressure ◽

Czochralski Method ◽

Temperature Gradients ◽

Pressure Controlled

Download Full-text

Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.11.040 ◽

2008 ◽

Vol 310 (7-9) ◽

pp. 1418-1423 ◽

Author(s):

F.-M. Kiessling ◽

M. Albrecht ◽

K. Irmscher ◽

R. Krause-Rehberg ◽

W. Ulrici ◽

...

Keyword(s):

Vapour Pressure ◽

Czochralski Technique ◽

Defect Distribution ◽

Pressure Controlled

Download Full-text

Two- and three-dimensional transient melt-flow simulation in vapour-pressure-controlled Czochralski crystal growth

Computers & Fluids ◽

10.1016/j.compfluid.2005.01.004 ◽

2006 ◽

Vol 35 (10) ◽

pp. 1400-1419 ◽

Author(s):

E. Bänsch ◽

D. Davis ◽

H. Langmach ◽

G. Reinhardt ◽

M. Uhle

Keyword(s):

Crystal Growth ◽

Vapour Pressure ◽

Three Dimensional ◽

Flow Simulation ◽

Melt Flow ◽

Czochralski Crystal Growth ◽

Pressure Controlled

Download Full-text

Temperature field simulation and correlation to the structural quality of semi-insulating GaAs crystals grown by the vapour pressure controlled Czochralski method (VCz)

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00208-6 ◽

2000 ◽

Vol 213 (1-2) ◽

pp. 10-18 ◽

Author(s):

Ch. Frank ◽

K. Jacob ◽

M. Neubert ◽

P. Rudolph ◽

J. Fainberg ◽

...

Keyword(s):

Temperature Field ◽

Vapour Pressure ◽

Czochralski Method ◽

Structural Quality ◽

Field Simulation ◽

Pressure Controlled

Download Full-text

Vapour pressure-controlled crystallization of [(Me3Sn)2Ni(CN)4]: a remote Hofmann-type coordination polymer

Inorganic Chemistry Communications ◽

10.1016/s1387-7003(00)00114-3 ◽

2000 ◽

Vol 3 (8) ◽

pp. 433-435 ◽

Author(s):

Rolf Eckhardt ◽

R. Dieter Fischer

Keyword(s):

Coordination Polymer ◽

Vapour Pressure ◽

Controlled Crystallization ◽

Pressure Controlled

Download Full-text

Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3″–4″ gallium arsenide crystals

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00996-8 ◽

1999 ◽

Vol 198-199 ◽

pp. 349-354 ◽

Author(s):

K Böttcher ◽

P Rudolph ◽

M Neubert ◽

M Kurz ◽

A Pusztai ◽

...

Keyword(s):

Gallium Arsenide ◽

Temperature Field ◽

Vapour Pressure ◽

Global Temperature ◽

Field Simulation ◽

Pressure Controlled

Download Full-text

Numerical Simulation of Temperature and Flow Field in the Melt for the Vapour-pressure- controlled Czochralski Growth of GaAs

Crystal Research and Technology ◽

10.1002/1521-4079(200108)36:7<685::aid-crat685>3.0.co;2-# ◽

2001 ◽

Vol 36 (7) ◽

pp. 685 ◽

Author(s):

W. Miller ◽

U. Rehse

Keyword(s):

Numerical Simulation ◽

Vapour Pressure ◽

Czochralski Growth ◽

Pressure Controlled

Download Full-text

First results of s.i. GaAs single crystal growth applying the vapour pressure controlled Czochralski method

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570868 ◽

2002 ◽

Author(s):

M. Neubert ◽

M. Seifert ◽

P. Rudolph ◽

K. Trompa ◽

M. Pietsch

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Vapour Pressure ◽

Czochralski Method ◽

Single Crystal Growth ◽

First Results ◽

Pressure Controlled

Download Full-text

Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density

Crystal Research and Technology ◽

10.1002/crat.2170320104 ◽

1997 ◽

Vol 32 (1) ◽

pp. 35-50 ◽

Author(s):

P. Rudolph ◽

M. Neubert ◽

S. Arulkumaran ◽

M. Seifert

Keyword(s):

Dislocation Density ◽

Vapour Pressure ◽

Electronic Materials ◽

Low Dislocation Density ◽

Pressure Controlled

Download Full-text