Two- and three-dimensional transient melt-flow simulation in vapour-pressure-controlled Czochralski crystal growth

2006 ◽  
Vol 35 (10) ◽  
pp. 1400-1419 ◽  
Author(s):  
E. Bänsch ◽  
D. Davis ◽  
H. Langmach ◽  
G. Reinhardt ◽  
M. Uhle
Keyword(s):  
Crystal Growth ◽  
Vapour Pressure ◽  
Three Dimensional ◽  
Flow Simulation ◽  
Melt Flow ◽  
Czochralski Crystal Growth ◽  
Pressure Controlled

Three-Dimensional Simulation of Silicon Melt Flow in Electromagnetic Czochralski Crystal Growth

2000 ◽  
Vol 39 (Part 1, No. 2A) ◽  
pp. 372-377 ◽  
Author(s):  
Wei Wang ◽  
Masahito Watanabe ◽  
Taketoshi Hibiya ◽  
Takahiko Tanahashi
Keyword(s):  
Crystal Growth ◽  
Three Dimensional ◽  
Melt Flow ◽  
Czochralski Crystal Growth ◽  
Silicon Melt ◽  
Dimensional Simulation

Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth

2010 ◽  
Vol 45 (6) ◽  
pp. 573-582 ◽  
Author(s):  
F. Mokhtari ◽  
A. Bouabdallah ◽  
A. Merah ◽  
M. Zizi ◽  
S. Hanchi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Pressure Field ◽  
Three Dimensional ◽  
Czochralski Crystal Growth

Application of Double Crucible in Cz Si Crystal Growth

2011 ◽  
Vol 178-179 ◽  
pp. 501-506
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Three Dimensional ◽  
Single Crystal Growth ◽  
Melt Flow ◽  
Phosphorus Doping ◽  
Phosphorus Diffusion ◽  
Double Crucible ◽  
Flow Heat ◽  
Phosphorus Losses

The numerical modeling of melt flow, heat transfer and impurity (phosphorus) diffusion in the double crucible of "Redmet-90M" Cz puller was carried out in an application to a 200 mm diameter Si single crystal growth. The double crucible consists of two coaxial crucibles having different sizes: 490 mm (external) and 300 mm (internal) inner diameters. The bottom of internal crucible has a central hole of Do = 6 and 12 mm diameter for melt inflow from the external crucible. During crystal pulling the granulated Si was added in the external crucible and a melt of the internal crucible was doped by phosphorus. Three-dimensional features of a rotating melt flow affecting on heat transfer and impurity diffusion in the internal crucible were analyzed. In particular, the melt precession and thermal asymmetry near the liquid-solid interface (LSI) in the internal crucible are discussed. It is shown that a significant phosphorus losses caused by its evaporation from a melt surface may be compensated by additional phosphorus doping in the internal crucible.

Melt Flow Simulations of Czochralski Crystal Growth Process of Silicon for Large Crystals

2019 ◽  
Vol 3 (4) ◽  
pp. 41-52 ◽  
Author(s):  
Prashant R. Gunjal ◽  
Milind S. Kulkarni ◽  
Palghat A. Ramachandran
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Melt Flow ◽  
Flow Simulations ◽  
Czochralski Crystal Growth ◽  
Crystal Growth Process

Density anomaly effect upon silicon melt flow during Czochralski crystal growth II. Time-topical flow structure under the growth interface

1996 ◽  
Vol 160 (1-2) ◽  
pp. 49-54 ◽  
Author(s):  
Shinji Togawa ◽  
Sang-Ik Chung ◽  
Soroku Kawanishi ◽  
Koji Izunome ◽  
Kazutaka Terashima ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Flow Structure ◽  
Melt Flow ◽  
Growth Interface ◽  
Czochralski Crystal Growth ◽  
Density Anomaly ◽  
Silicon Melt
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