Polarity determination in (001)-oriented AIII — BV compound semiconductors by the Kossel technique and chemical etching

Author(s):  
G. Nolze ◽  
V. Geist ◽  
G. Wagner ◽  
P. Paufler ◽  
K. Jurkschat
1990 ◽  
Vol 193 (1-2) ◽  
pp. 111-126 ◽  
Author(s):  
G. Nolze ◽  
V. Geist ◽  
G. Wagner ◽  
P. Paufler ◽  
K. Jurkschat

1988 ◽  
Vol 52 (18) ◽  
pp. 1502-1504 ◽  
Author(s):  
A. C. Chami ◽  
E. Ligeon ◽  
R. Danielou ◽  
J. Fontenille

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 380
Author(s):  
Im Taek Yoon ◽  
Juwon Lee ◽  
Ngoc Cuong Tran ◽  
Woochul Yang

For this study, polarity-controlled ZnO films were grown on lithium niobate (LiNbO3) substrates without buffer layers using the pulsed-laser deposition technique. The interfacial structure between the ZnO films and the LiNbO3 was inspected using high-resolution transmission electron microscopy (HR-TEM) measurements, and X-ray diffraction (XRD) measurements were performed to support these HR-TEM results. The polarity determination of the ZnO films was investigated using piezoresponse force microscopy (PFM) and a chemical-etching analysis. It was verified from the PFM and chemical-etching analyses that the ZnO film grown on the (+z) LiNbO3 was Zn-polar ZnO, while the O-polar ZnO occurred on the (-z) LiNbO3. Further, a possible mechanism of the interfacial atomic configuration between the ZnO on the (+z) LiNbO3 and that on the (-z) LiNbO3 was suggested. It appears that the electrostatic stability at the substrate surface determines the initial nucleation of the ZnO films, leading to the different polarities in the ZnO systems.


2010 ◽  
Vol 442 ◽  
pp. 1-6
Author(s):  
Y.T. Taurbayev ◽  
K.A. Gonchar ◽  
A.V. Zoteev ◽  
Victor Timoshenko ◽  
Z.Zh. Zhanabayev ◽  
...  

Wafers of silicon and compound semiconductors are nanostructured by using electrochemical or chemical etching (stain etching) in etching cell with electrolyte kept by capillary forces. Atomic force microscopy, infrared spectroscopy and Raman scattering methods reveale nanoporous and nanocrystalline structure of the treated surfaces. The formed porous semiconductors demonstrate efficient photoluminescence, which is controlled by etching parameters, i.e. current density, electrolyte content, etc. These results indicate good prospects of the employed capillary-cell method for preparing nanostructured porous materials with desired structure and optical properties.


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