scholarly journals Polarity Control of ZnO Films Grown on Ferroelectric (0001) LiNbO3 Substrates without Buffer Layers by Pulsed-Laser Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 380
Author(s):  
Im Taek Yoon ◽  
Juwon Lee ◽  
Ngoc Cuong Tran ◽  
Woochul Yang

For this study, polarity-controlled ZnO films were grown on lithium niobate (LiNbO3) substrates without buffer layers using the pulsed-laser deposition technique. The interfacial structure between the ZnO films and the LiNbO3 was inspected using high-resolution transmission electron microscopy (HR-TEM) measurements, and X-ray diffraction (XRD) measurements were performed to support these HR-TEM results. The polarity determination of the ZnO films was investigated using piezoresponse force microscopy (PFM) and a chemical-etching analysis. It was verified from the PFM and chemical-etching analyses that the ZnO film grown on the (+z) LiNbO3 was Zn-polar ZnO, while the O-polar ZnO occurred on the (-z) LiNbO3. Further, a possible mechanism of the interfacial atomic configuration between the ZnO on the (+z) LiNbO3 and that on the (-z) LiNbO3 was suggested. It appears that the electrostatic stability at the substrate surface determines the initial nucleation of the ZnO films, leading to the different polarities in the ZnO systems.

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1306-1309 ◽  
Author(s):  
Xiaofeng Xu ◽  
Yiqun Shen ◽  
Ning Xu ◽  
Wei Hu ◽  
Jushui Lai ◽  
...  

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.


Author(s):  
Rama M. Nekkanti ◽  
Paul N. Barnes ◽  
Lyle B. Brunke ◽  
Timothy J. Haugan ◽  
Nick A. Yust ◽  
...  

2009 ◽  
Vol 55 (3(1)) ◽  
pp. 1098-1101 ◽  
Author(s):  
Hooyoung Song ◽  
Jae-Hoon Kim ◽  
EunKyu Kim ◽  
Sung-Min Hwang

2020 ◽  
Vol 7 (1) ◽  
pp. 016414
Author(s):  
Reeson Kek ◽  
Kwan-Chu Tan ◽  
Chen Hon Nee ◽  
Seong Ling Yap ◽  
Song Foo Koh ◽  
...  

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