Enhanced the light absorptance of stain-etched black Silicon decorated by TiN nanoparticles

Due to the high energy, narrow distribution and breaking through the absorption limitation, plasmon induced hot electrons has been widely applied to extend the photoresponse spectra of the semiconductor. In order to further enhance the resonance effect of local plasmon based on metallic nanostructures, we used hydrofluoric stain etching method to fabricate nanostructured black silicon (BSi) and deposited titanium nitride (TiN) nanoparticles on its surface by reactive magnetron-sputtering. The results show that the BSi modified by plasmonic TiN nanoparticles has higher absorption in wavelength range from 1100 to 2500 nm compared to that of conventional acid etching of BSi. A PIN photoelectronic detector fabricated by the proposed BSi shows excellent device performance with responsivity of 0.45A/W at 1060 nm in near infrared band.

Novel Method for Electroless Etching of 6H–SiC

In this article, we report an electroless method to fabricate porous hexagonal silicon carbide and hexagonal silicon carbide nanoparticles (NPs) as small as 1 nm using wet chemical stain etching. We observe quantum confinement effect for ultrasmall hexagonal SiC NPs in contrast to the cubic SiC NPs. We attribute this difference to the various surface terminations of the two polytypes of SiC NPs.

Дефекты с глубокими уровнями в фотоэлектрическом преобразователе с антиотражающей пленкой пористого кремния, сформированной окрашивающим химическим травлением

Defects in the semiconductor structure of a photovoltaic converter (PVC) with a p – n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.

PASSIVATION OF CRYSTALLINE SILICON ON POROUS SILICON SURFACE TREATED BY ERBIUM OXIDES (Er2O3) FOR ENHANCEMENT THE PHOTOVOLTAIC PROPERTIES

The aim of this paper is to study the effect of erbium oxide (Er2O3) on porous silicon (PS) wafers used for photovoltaic application. An immersion of PS wafers in Er2O3 solution can be used to enhance light trapping and form an efficient surface by passivation process. PS was prepared by the stain-etching method and doped by Er species. In fact, the topography was investigated by the scanning electron microscope (SEM). In addition, the spectral behaviors of the reflectivity and the photoluminescence were discussed. The dependence of minority carrier lifetime was evaluated by means of the Quasi-Steady-State Photoconductance technique (QSSPC). Besides, an enhancement in lifetime was observed. A framework is provided for estimating an efficiency improvement in studied films which will help to guide the development of improved energy-efficient.