scholarly journals ACCURATE TORSIONAL BARRIER HEIGHT OF TRIFLUROACETIC ACID

2021 ◽  
Author(s):  
Luyao Zou ◽  
L. Margulès ◽  
R. Motiyenko
2004 ◽  
Vol 683 (1-3) ◽  
pp. 171-174 ◽  
Author(s):  
Mohammad Solimannejad ◽  
Ljupčo Pejov

2004 ◽  
Vol 676 (1-3) ◽  
pp. 115-117 ◽  
Author(s):  
Mohammad Solimannejad ◽  
Masoud Haratian

1992 ◽  
Vol 70 (3) ◽  
pp. 931-934 ◽  
Author(s):  
N. N. Yakovlev ◽  
I. A. Godunov

The [Formula: see text] electronic absorption spectra of acetaldehyde-h4 and -d4 were recorded in the vapour phase at room temperature. The major experimental requirement was a high pressure × path length (650 Torr × 140 m). The vibrational structure of these electronic transitions was interpreted in terms of the torsional modes [Formula: see text] and [Formula: see text] attached to the [Formula: see text] out-of-plane bending mode. The main CH3CHO results agreed with those obtained earlier (Moule and Ng); the values of the [Formula: see text] transition and torsional barrier height were 27240.1 and 590 cm−1 respectively. Three inversion (out-of-plane bending) energy levels in the excited [Formula: see text] state were found and the inversion potential function was determined with a barrier height of 1110 cm−1. The CD3CDO spectrum confirmed the CH3CHO analysis. The values of the [Formula: see text] transition and torsional barrier height were equal to 27270 and 610 cm−1. Keywords: vibronic spectrum, acetaldehyde, molecular structure.


2013 ◽  
Vol 125 (4) ◽  
pp. 913-917 ◽  
Author(s):  
REZA FAZAELI ◽  
MOHAMMAD SOLIMANNEJAD ◽  
ABDOLVAHAB SEIF

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.


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