Investigation of random telegraph noise characteristics of Hf-based MONOS nonvolatile memory devices with HfO2 and HfON tunneling layer

This paper investigated the low frequency noise (LFN) utilizing 1/f noise and random telegraph noise (RTN) characteristics of Hf-based metal/oxide/nitride/oxide/silicon (MONOS) nonvolatile memory (NVM) device with HfO2 and HfON tunneling layer (TL). The low frequency noise spectral density (SID ) was investigated to evaluate the interface characteristics with fresh and after programming/erasing (P/E) cycles of 104. Both devices show similar slope of ~1/f in all of the frequency regions. Although HfON TL shows high SID compared to HfO2 TL, increased ratio is 15.4 which is low compared to HfO2 TL of 21.3. As decreasing the channel length from 10 to 2 μm, HfON TL shows small increased ratio of SID . Due to the nitrided characteristics, HfON TL suppress the degradation of interface. Finally, it is found that trap site of HfO2 TL is located near the interface by RTN measurement with capture (τC) and emission time constant (τE).

Characterization of Graphenic Carbon Produced by Pulsed Laser Ablation of Sacrificial Carbon Tapes

This paper reports on the pulsed laser deposition of nanocarbon films on metal and dielectric substrates, using high-purity sacrificial carbon tape as a carbon source on a neutral gas background. The films were characterized by X-ray diffraction (XRD), photoelectron (XPS) and Raman spectroscopy. The XRD and Raman structural analyses revealed that the synthesized films have a graphenic nanocrystalline turbostratic structure, with sp2 clusters about 15–18 nm in size, depending on the laser fluence. A significant decrease in the oxygen and hydrogen contents in the films, in comparison with the target material, was established using XPS, as well as a significant decrease in the sp3 carbon content. The deposited films were found to be similar to reduced graphene oxide (rGO) in composition, with a surprisingly low number of defects in the sp2-matrix. The method proposed in the work may have good prospects of application in the production of energy storage and nonvolatile memory devices.

Nonvolatile Organic Field-Effect Transistor Memory from Pyrene-fused Azaindacene Regioisomers

Nonvolatile memory devices based on organic materials are promising for new generation of portable or flexible electronics. Herein, we designed and synthesized two pyrene-fused azaindacene configurational isomers, syn-B2IPIO and anti-B2IPIO,...

Interfacial synthesis of a large-area coordination polymer membrane for rewritable nonvolatile memory devices

Stable nonvolatile memory devices with a high ON/OFF current ratio have been realized based on a large-area two-dimensional coordination polymer membrane.