scholarly journals Simulation of Anisotropic Chemical Etching of Single Crystalline Silicon using Cellular-Automata

2004 ◽  
Vol 124 (1) ◽  
pp. 7-13 ◽  
Author(s):  
Takamitsu Kakinaga ◽  
Osamu Tabata ◽  
Noriaki Baba ◽  
Yoshitada Isono ◽  
J. G. Korvink ◽  
...  
Keyword(s):  
Cellular Automata ◽  
Chemical Etching ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Microstructuring of the Surface of High-Resistivity Single-Crystalline Silicon by Chemical Etching

2019 ◽  
Vol 64 (9) ◽  
pp. 1030-1033
Author(s):  
A. S. Kashuba ◽  
E. V. Permikina ◽  
S. V. Golovin ◽  
M. R. Lakmanova ◽  
A. V. Pogozheva
Keyword(s):  
Chemical Etching ◽  
Crystalline Silicon ◽  
High Resistivity ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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