Optimization of the Refractive Index of Antireflection Coatings on Monocrystalline Silicon Solar Cells for Photovoltaic Application

In this work, the following materials have been chosen as anti-reflection layer, namely hafnium (HfO2), magnesium fluoride (MgF2), silicon oxynitrides (SiOxNy), silicon oxides (SiOx), silicon nitride (Si3N4) and hydrogenated silicon nitride (SiNx:H). The calculations were made on the basis of values of layer thicknesses and refractive indices that allow the phase and amplitude conditions to be respected and amplitude conditions. Numerical simulations have shown that low reflectivities at the surface of the surface of the plane cell coated with a simple layer, can be obtained. For example, for simple coatings materials based on Si3N4 and HfO2, we obtain a value of reflectivity around 3 and 2 % respectively. The structures with multilayer coatings such as MgF2/SiNx:H/Si, give a reflectivity of around 1 %. Thus, the refraction index of the coating is an important parameter that plays a major parameter that plays a major role in the optical properties of materials. The closer the refractive index is close to the index of the substrate or the layer above the substrate, the higher the reflectivity.

Band-gap-graded Cu2ZnSn(S,Se)4 drives high efficient solar cells

Fabrication of high efficient solar cells is critical for photovoltaic application. The bandgap-graded absorber layer can not only drive carriers efficient collection but also improve the light harvesting. However, it...

Fabrication of p-NiO/n-TiO2 Solar Device for Photovoltaic Application

Energy demand is increasing globally owing to population growth. Solar cell development has gained considerable attention because of its potential to provide everyone with sustainable, affordable, clean, and globally accessible energy. A heterojunction solar device for photovoltaic applications was developed in this study, using nickel oxide (NiO) as the p-type and titanium oxide (TiO2) as the n-type. The material chosen was motivated by the affordability, availability, and performance compared to existing silicon that is more efficient but less affordable and available. The TiO2 and NiO2 were synthesised and characterised before the deposition and characterisation of the solar cells. The characterisation was carried out using Fourier transform infrared spectroscopy (FTIR), Transmission Electron Microscopy (TEM), scanning electron microscopy (SEM), EDX, X-ray Diffraction (XRD), and a four-point probe. The deposition parameters were fine-tuned to achieve optimum optoelectronic properties for the solar device. The final device exhibited an open-circuit voltage of 370 mV, a current density of 1.7 mA, and solar cells efficiency of 3.7.