Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application

2013 ◽  
Vol 113 (2) ◽  
pp. 327-332 ◽  
Author(s):  
A.H. Reshak ◽  
M.M. Shahimin ◽  
S. Shaari ◽  
N. Johan
Keyword(s):  
Surface Modification ◽  
Chemical Etching ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Photovoltaic Application ◽  
Wet Chemical ◽  
Wet Chemical Etching

NOHSO4/HF – A Novel Etching System for Crystalline Silicon

2007 ◽  
Vol 62 (11) ◽  
pp. 1411-1421 ◽  
Author(s):  
Sebastian Patzig ◽  
Gerhard Roewer ◽  
Edwin Kroke ◽  
Ingo över
Keyword(s):  
Gas Phase ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Etching Solution ◽  
Wide Range ◽  
Ft Ir ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching System

Solutions consisting of HF - NOHSO4 - H2SO4 exhibit a strong reactivity towards crystalline silicon which is controlled by the concentrations of the reactive species HF and NO+. Selective isotropic and anisotropic wet chemical etching with these solutions allows to generate a wide range of silicon surface morphology patterns. Traces of Ag+ ions stimulate the reactivity and lead to the formation of planarized (polished) silicon surfaces. Analyses of the silicon surface, the etching solution and the gas phase were performed with scanning electron microscopy (SEM), DR/FT-IR (diffusive reflection Fourier transform infra-red), FT-IR, Raman and NMR spectroscopy, respectively. It was found that the resulting silicon surface is hydrogen-terminated. The gas phase contains predominantly SiF4, NO and N2O. Furthermore, NH4+ is produced in solution. The study has confirmed the crucial role of nitrosyl ions for isotropic wet chemical etching processes. The novel etching system is proposed as an effective new way for selective surface texturing of multi- and monocrystalline silicon. A high etching bath service lifetime, besides a low contamination of the etching solution with reaction products, provides ecological and economical advantages for the semiconductor and solar industry.

Microstructuring of the Surface of High-Resistivity Single-Crystalline Silicon by Chemical Etching

2019 ◽  
Vol 64 (9) ◽  
pp. 1030-1033
Author(s):  
A. S. Kashuba ◽  
E. V. Permikina ◽  
S. V. Golovin ◽  
M. R. Lakmanova ◽  
A. V. Pogozheva
Keyword(s):  
Chemical Etching ◽  
Crystalline Silicon ◽  
High Resistivity ◽  
Single Crystalline Silicon ◽  
Single Crystalline

scholarly journals Simulation of Anisotropic Chemical Etching of Single Crystalline Silicon using Cellular-Automata

2004 ◽  
Vol 124 (1) ◽  
pp. 7-13 ◽  
Author(s):  
Takamitsu Kakinaga ◽  
Osamu Tabata ◽  
Noriaki Baba ◽  
Yoshitada Isono ◽  
J. G. Korvink ◽  
...  
Keyword(s):  
Cellular Automata ◽  
Chemical Etching ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline
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