Resistive Switching Effect and Dielectric Property of Epitaxial BiFeO3 Thin Films by Off-axis Magnetron Sputtering

Obvious resistive switching is observed under light irradiation in BaTiO3/CoFeB/BaTiO3 trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4[Formula: see text]mW/cm2, the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600[Formula: see text]C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.

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The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

Applied Physics Letters ◽

10.1063/1.3167810 ◽

2009 ◽

Vol 95 (1) ◽

pp. 013109 ◽

Cited By ~ 57

Author(s):

Lin Yang ◽

Carsten Kuegeler ◽

Krzysztof Szot ◽

Andreas Ruediger ◽

Rainer Waser

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Resistive Switching ◽

Switching Effect ◽

Tio2 Thin Films ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force ◽

Resistive Switching Effect

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Unipolar resistive switching effect in YMn1−δO3 thin films

Applied Physics Letters ◽

10.1063/1.3280380 ◽

2010 ◽

Vol 96 (1) ◽

pp. 012103 ◽

Cited By ~ 37

Author(s):

Z. B. Yan ◽

S. Z. Li ◽

K. F. Wang ◽

J.-M. Liu

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Switching Effect ◽

Unipolar Resistive Switching ◽

Resistive Switching Effect

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Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

MRS Proceedings ◽

10.1557/opl.2011.1198 ◽

2011 ◽

Vol 1330 ◽

Cited By ~ 18

Author(s):

Stefan Tappertzhofen ◽

Marek Hempel ◽

Ilia Valov ◽

Rainer Waser

Keyword(s):

Thin Films ◽

Ion Transport ◽

Resistive Switching ◽

Metal Ion ◽

Switching Behavior ◽

Switching Effect ◽

Proton Mobility ◽

Metal Ion Transport ◽

The Impact ◽

Resistive Switching Effect

ABSTRACTSilicon dioxide based Electrochemical Metallization (ECM) cells were intensively studied as a promising candidate for CMOS compatible non-volatile memory devices. The resistance of ECM cells can be switched between a high resistive (OFF) state and a low resistive (ON) state by applying a sufficient voltage or current pulse. This resistance transition is attributed to the formation and rupture of a few nanometers in diameter metallic filament. However, the metal ion transport which is believed to be responsible for the filamentary switching mechanism is not understood in detail. In case of SiO2 we suppose protons or humidity may enhance the metal ion transport.In this work we report our studies on the proton incorporation in amorphous SiO2 thin films focused on the impact of hydrogen and humidity on the resistive switching effect. The switching behavior was analyzed by current-voltage measurements performed at different ambient conditions. The incorporation of hydrogen has been confirmed by Time-of-Flight Secondary-Ion-Mass-Spectroscopy (ToF-SIMS). The results led to an expansion of the defect model proposed in the literature.

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