Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Electric modulation of conduction in MAPbBr3 single crystals

The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites has not been clearly understood until now. A switchable diode-like RS behavior in MAPbBr3 single crystals using Au (or Pt) symmetric electrodes is reported. Both the high resistance state (HRS) and low resistance state (LRS) are electrode-area dependent and light responsive. We propose an electric-field-driven inner p-n junction accompanied by a trap-controlled space-charge-limited conduction (SCLC) conduction mechanism to explain this switchable diode-like RS behavior in MAPbBr3 single crystals.