Fundamental Studies of Plutonium Aging

MRS Bulletin ◽  
2001 ◽  
Vol 26 (9) ◽  
pp. 679-683 ◽  
Author(s):  
Brian D. Wirth ◽  
Adam J. Schwartz ◽  
Michael J. Fluss ◽  
Maria J. Caturla ◽  
Mark A. Wall ◽  
...  

Plutonium metallurgy lies at the heart of science-based stockpile stewardship. One aspect is concerned with developing predictive capabilities to describe the properties of stockpile materials, including an assessment of microstructural changes with age. Yet, the complex behavior of plutonium, which results from the competition of its 5f electrons between a localized (atomic-like or bound) state and an itinerant (delocalized bonding) state, has been challenging materials scientists and physicists for the better part of five decades. Although far from quantitatively absolute, electronic-structure theory provides a description of plutonium that helps explain the unusual properties of plutonium, as recently reviewed by Hecker. (See also the article by Hecker in this issue.) The electronic structure of plutonium includes five 5f electrons with a very narrow energy width of the 5f conduction band, which results in a delicate balance between itinerant electrons (in the conduction band) or localized electrons and multiple lowenergy electronic configurations with nearly equivalent energies. These complex electronic characteristics give rise to unique macroscopic properties of plutonium that include six allotropes (at ambient pressure) with very close free energies but large (∼25%) density differences, a lowsymmetry monoclinic ground state rather than a high-symmetry close-packed cubic phase, compression upon melting (like water), low melting temperature, anomalous temperature-dependence of electrical resistance, and radioactive decay. Additionally, plutonium readily oxidizes and is toxic; therefore, the handling and fundamental research of this element is very challenging due to environmental, safety, and health concerns.

1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.


2013 ◽  
Vol 750-752 ◽  
pp. 1199-1202
Author(s):  
Jiang Ni Yun ◽  
Tieen Yin ◽  
Zhi Yong Zhang

The electronic structure, band structure, density of states (DOS) and electronic density difference of paraelectric SrTiO3 in the cubic phase were performed by the first-principles calculation based on the density functional theory (DFT). The energy levels of high symmetry points in the Brillouin zone were listed and Mulliken population analysis was performed for valence bond structures. The top valence band of SrTiO3 is at the R point, and the minimum of the conduction bands is at the Γ point. The calculated value for indirect band gap is 1.84eV in the Brillouin zone. As in other perovskite ABO3 ferroelectrics, the population analysis, DOS and electron density difference show that there is a very strong hybridization between the Ti3d and O2p states in the valence bands, which is responsible for the ferroelectricity tendency.


2021 ◽  
Vol 23 (12) ◽  
pp. 7418-7425
Author(s):  
Magdalena Laurien ◽  
Himanshu Saini ◽  
Oleg Rubel

We calculate the band alignment of the newly predicted phosphorene-like puckered monolayers with G0W0 according to the electron affinity rule and examine trends in the electronic structure. Our results give guidance for heterojunction design.


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