Silver antimony sulfide-selenide for thin film solar cells

2014 ◽  
Vol 1670 ◽  
Author(s):  
Jesús Capistrán-Martínez ◽  
M.T.S Nair ◽  
P.K. Nair

AbstractThin films of AgSbS2 (150 nm) are prepared (75 min at 40 °C) via chemical deposition using a solution mixture containing SbCl3, Na2S2O3 and AgNO3. As-deposited films are amorphous. When they are heated in nitrogen at 180-320 °C, crystalline cubic-AgSbS2 films are formed. They show an optical band gap 1.89 eV and photoconductivity 1.8x10-5 Ω-1cm-1. Silver antimony sulfide-selenide film, AgSb(SxSe1-x)2, is produced from the initial amorphous film when it is heated in presence of Se-vapor. XRD analysis confirms the formation of solid solution AgSbS1.25Se0.75 or AgSbSe2 depending on the extent of Se-vapor available during heating. SnO2:F/CdS/AgSbS2/C solar cell shows Voc 610 mV, Jsc 0.88 mA/cm2,FF 0.53 and η 0.28%. In SnO2:F/CdS/Sb2S3/AgSb(SxSe1-x)2/C solar cell, Voc is 582 mV, Jsc 0.99 mA/cm2, FF 0.51 and η 0.29%.

2011 ◽  
Vol 1327 ◽  
Author(s):  
Dong Won Kang ◽  
Jong Seok Woo ◽  
Sung Hwan Choi ◽  
Seung Yoon Lee ◽  
Heon Min. Lee ◽  
...  

ABSTRACTWe have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.


2019 ◽  
Vol 669 ◽  
pp. 410-418 ◽  
Author(s):  
P.K. Nair ◽  
Eira Anais Zamudio Medina ◽  
Geovanni Vázquez García ◽  
Laura Guerrero Martínez ◽  
M.T.S. Nair

2018 ◽  
Vol 5 (4) ◽  
pp. 041602 ◽  
Author(s):  
Michael Powalla ◽  
Stefan Paetel ◽  
Erik Ahlswede ◽  
Roland Wuerz ◽  
Cordula D. Wessendorf ◽  
...  

2018 ◽  
Vol 645 ◽  
pp. 305-311 ◽  
Author(s):  
P.K. Nair ◽  
Geovanni Vázquez García ◽  
Eira Anais Zamudio Medina ◽  
Laura Guerrero Martínez ◽  
Oscar Leyva Castrejón ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 6562-6570 ◽  
Author(s):  
Fang Qin Zeng ◽  
Yan Qing Lai ◽  
Zi Li Han ◽  
Boon K. Ng ◽  
Zhi An Zhang ◽  
...  

A CZTSSe thin film solar cell was fabricated by a sol–gel method with an efficiency of 8.08%.


2014 ◽  
Vol 16 (9) ◽  
pp. 4323-4332 ◽  
Author(s):  
Kyujin Kim ◽  
Inhyuk Kim ◽  
Yunjung Oh ◽  
Daehee Lee ◽  
Kyoohee Woo ◽  
...  

A Cu2ZnSnS4 solar cell with an efficiency of 8.17% was fabricated using a non-toxic solvent-based hybrid-ink without the involvement of a complex synthesis, toxic solvents or harmful post-selenization.


2015 ◽  
Vol 4 (3) ◽  
pp. Q9-Q16 ◽  
Author(s):  
Rogelio González-Lúa ◽  
José Escorcia-García ◽  
Diego Pérez-Martínez ◽  
M. T. S. Nair ◽  
José Campos ◽  
...  

2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.


Sign in / Sign up

Export Citation Format

Share Document