Fabrication of earth-abundant Cu2ZnSn(S,Se)4 light absorbers by a sol–gel and selenization route for thin film solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 6562-6570 ◽  
Author(s):  
Fang Qin Zeng ◽  
Yan Qing Lai ◽  
Zi Li Han ◽  
Boon K. Ng ◽  
Zhi An Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Sol Gel ◽  
Thin Film Solar Cells ◽  
Gel Method ◽  
Sol Gel Method ◽  
Earth Abundant ◽  
Light Absorbers

A CZTSSe thin film solar cell was fabricated by a sol–gel method with an efficiency of 8.08%.

Insulating oxide buffer layer formed by sol–gel method for planarization of stainless steel substrate of a-Si:H thin film solar cell

2012 ◽  
Vol 47 (10) ◽  
pp. 3044-3047 ◽  
Author(s):  
Sun Jin Yun ◽  
Yoo Jeong Lee ◽  
Jung Wook Lim ◽  
Joung Hee Yun ◽  
Jehoon Baek ◽  
...  
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Solar Cell ◽  
Buffer Layer ◽  
Thin Film Solar Cell ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Optik ◽  
2013 ◽  
Vol 124 (21) ◽  
pp. 4876-4879 ◽  
Author(s):  
Fenglin Xian ◽  
Kaibo Miao ◽  
Xuecheng Bai ◽  
Yun Ji ◽  
Feier Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Sol Gel ◽  
Thin Film Solar Cells ◽  
Zno Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno

scholarly journals Effect of annealing temperature on silicon-based MoSx thin film solar cells

RSC Advances ◽  
2019 ◽  
Vol 9 (58) ◽  
pp. 33710-33715
Author(s):  
Haoyu Xu ◽  
Dongqiang Chen ◽  
Litao Xin ◽  
Heju Xu ◽  
Wei Yu
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Molybdenum Sulfide ◽  
Thin Film Solar Cells ◽  
Gel Method ◽  
Heterojunction Solar Cells ◽  
Sulfide Film ◽  
Silicon Based

A suitable annealing temperature was found by adopting the sol–gel method to prepare silicon-based molybdenum sulfide film heterojunction solar cells.

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Trap Density ◽  
Thin Film Solar Cells ◽  
Content Type ◽  
Cigs Thin Film ◽  
Absorbing Layer ◽  
Cigs Solar Cells

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

Improvement of Mo/Cu2ZnSnS4 interface for Cu2ZnSnS4 (CZTS) thin film solar cell application

2014 ◽  
Vol 1638 ◽  
Author(s):  
Hongtao Cui ◽  
Xiaolei Liu ◽  
Xiaojing Hao ◽  
Fangyang Liu ◽  
Ning Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Contact Region ◽  
Thin Film Solar Cells ◽  
Czts Thin Film ◽  
Back Contact ◽  
Secondary Phases ◽  
Solar Cell Application

ABSTRACTThe focus of this work is on back contact improvement for sputtered CZTS thin film solar cells. Three methods have been investigated including a thin Ag coating, a thin ZnO coating on the Mo back contact and rapid thermal annealing of the back contact. All of these methods have been found to reduce defects such as voids as well as secondary phases at the back contact region and inhibit the formation of MoS2. Consequently all the mothods effectively enhances Voc, Jsc, FF and therefore efficiency significantly.

Metal sulfide precursor aqueous solutions for fabrication of Cu2ZnSn(S,Se)4 thin film solar cells

2015 ◽  
Vol 17 (2) ◽  
pp. 1269-1275 ◽  
Author(s):  
Qingwen Tian ◽  
Lijian Huang ◽  
Wangen Zhao ◽  
Yanchun Yang ◽  
Gang Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Solar Cells ◽  
Solar Cell ◽  
Aqueous Solutions ◽  
Thin Film Solar Cell ◽  
Metal Sulfide ◽  
Thin Film Solar Cells ◽  
Photoelectric Conversion

An aqueous solution deposited Cu2ZnSn(S,Se)4 thin film solar cell with a photoelectric conversion of 6.62% was fabricated.

High efficiency and high open-circuit voltage quadruple-junction silicon thin film solar cells for future electronic applications

2017 ◽  
Vol 10 (5) ◽  
pp. 1134-1141 ◽  
Author(s):  
Bofei Liu ◽  
Lisha Bai ◽  
Tiantian Li ◽  
Changchun Wei ◽  
Baozhang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Silicon Based

A highly efficient quadruple-junction silicon based thin-film solar cell with a remarkably high open-circuit voltage was demonstrated to inspire functional photoelectrical devices for environmental applications.

Cu2ZnSnS4 thin film solar cells with 5.8% conversion efficiency obtained by a facile spray pyrolysis technique

RSC Advances ◽  
2015 ◽  
Vol 5 (95) ◽  
pp. 77565-77571 ◽  
Author(s):  
Thi Hiep Nguyen ◽  
Wilman Septina ◽  
Shotaro Fujikawa ◽  
Feng Jiang ◽  
Takashi Harada ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Spray Pyrolysis Technique ◽  
Thin Film Solar Cells ◽  
Spray Pyrolysis Deposition ◽  
Cu2znsns4 Thin Film

A CZTS-based thin film solar cell with a powder conversion efficiency of 5.8% was obtained by using facile spray pyrolysis deposition followed by annealing.

Graded Buffer Layer Effect on Performance of the Amorphous Silicon Thin Film Solar Cells

2011 ◽  
Vol 685 ◽  
pp. 60-64 ◽  
Author(s):  
Shui Yang Lien ◽  
Meng Jia Yang ◽  
Yang Shih Lin ◽  
Chia Fu Chen ◽  
Po Hung Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.

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