The Formation of Metal Carbide Layers by Elevated-Temperature Ion Implantation of Fe-Based Alloys

1988 ◽  
Vol 100 ◽  
Author(s):  
J. A. Sprague ◽  
I. L. Singer
Keyword(s):  
Elevated Temperature ◽  
Ion Implantation ◽  
Metal Carbide ◽  
Orientation Relation ◽  
Auger Analysis ◽  
Tem Analysis ◽  
Fine Grained ◽  
Continuous Layer ◽  
Carbide Layer

ABSTRACTAn Fe-i % C alloy has been implanted at approximately 600 °C with V to a fluence of 5 × 1017 ions/cm2 and with Nb to a fluence of 3 × 1017 ions/cm2. For both implantations, Auger analysis showed that a nominally stoichiometric metal carbide layer formed beneath the surface. Below this layer, which was depleted of Fe, the metal carbide concentration decreased gradually, giving a continually graded interface with the bulk. TEM analysis showed a continuous layer of fine-grained VC or NbC, which displayed a preferred Baker-Nutting orientation relation with the underlying a-Fe matrix.

Small-scale plasticity of ultra-fine grained alloy and nanostructured nanocomposite: Ambient and elevated-temperature nanoindentation

2021 ◽  
Vol 807 ◽  
pp. 140873
Author(s):  
F. Khodabakhshi ◽  
A.P. Gerlich ◽  
D. Verma ◽  
M. Nosko ◽  
M. Haghshenas
Keyword(s):  
Elevated Temperature ◽  
Small Scale ◽  
Fine Grained

Elevated temperature mechanical properties of novel ultra-fine grained Cu–Nb composites

2015 ◽  
Vol 625 ◽  
pp. 296-302 ◽  
Author(s):  
Mladen-Mateo Primorac ◽  
Manuel David Abad ◽  
Peter Hosemann ◽  
Marius Kreuzeder ◽  
Verena Maier ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Elevated Temperature ◽  
Fine Grained

Hybrid elevated-temperature, low/high-voltage plasma immersion ion implantation of AISI304 stainless steel

2001 ◽  
Vol 135 (2-3) ◽  
pp. 178-183 ◽  
Author(s):  
X.B. Tian ◽  
Y.X. Leng ◽  
T.K. Kwok ◽  
L.P. Wang ◽  
B.Y. Tang ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Elevated Temperature ◽  
Ion Implantation ◽  
High Voltage ◽  
Plasma Immersion Ion Implantation

Structure of Si near-surface layer after 64Zn+ ion implantation at elevated temperature

2015 ◽  
Vol 9 (4) ◽  
pp. 804-811 ◽  
Author(s):  
V. V. Privezentsev ◽  
V. S. Kulikauskas ◽  
V. V. Zatekin ◽  
N. Yu. Tabachkova ◽  
S. V. Ksenich
Keyword(s):  
Surface Layer ◽  
Elevated Temperature ◽  
Ion Implantation ◽  
Near Surface

Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide

2009 ◽  
Vol 145-146 ◽  
pp. 281-284 ◽  
Author(s):  
Eric J. Bergman ◽  
J. Dusty Leonhard
Keyword(s):  
Hydrogen Peroxide ◽  
Sulfuric Acid ◽  
Elevated Temperature ◽  
Ion Implantation ◽  
Sulfur Trioxide ◽  
Surface Roughening ◽  
High Dose ◽  
Device Performance ◽  
Hot Electron ◽  
Hot Electron Injection

Ion implantation is one of many critical processes in the fabrication of semiconductor devices. While device geometries have been shrinking, the implant dose has typically been increasing. Historically, photoresist removal has been achieved through a combination of plasma “ashing” and a subsequent wet clean, often using a mixture of sulfuric acid and hydrogen peroxide at elevated temperature. The “piranha” or SPM strip is often followed by an ammonia based clean such as APM to remove particles and sulfate residues from the device. However, device constraints are presently having difficulty accommodating the film loss, surface roughening, high molecular temperatures and hot electron injection which may accompany a plasma ash. [1] The APM clean is also having to undergo modification in order to minimize oxide loss which would adversely affect device performance.

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