Effect of Electric Fields in Coupled Double Quantum Wells

1987 ◽  
Vol 102 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
B. Elman ◽  
C. A. Armiento

ABSTRACTWe present a detailed experimental study of the influence of electric fields on exciton states in a GaAs/AlGaAs coupled double quantum well structure and discuss the advantages of using this novel structure. The coupling of electronic states in the two quantum wells, due to the narrowness of the barrier between them, leads to an enhancement of the quantum-confined Stark effect (by as much as five times that of the single quantum well case). From the measured energies of the exciton transitions, splittings of the levels in a coupled double quantum well structure were derived without recourse to a theoretical model.

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.


1999 ◽  
Vol 38 (Part 2, No. 8B) ◽  
pp. L914-L916 ◽  
Author(s):  
Takahiro Deguchi ◽  
Kaoru Sekiguchi ◽  
Atsushi Nakamura ◽  
Takayuki Sota ◽  
Ryuji Matsuo ◽  
...  

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Amano ◽  
T. Takeuchi ◽  
S. Sota ◽  
H. Sakai ◽  
I. Akasaki

ABSTRACTStructural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.


1987 ◽  
Vol 36 (8) ◽  
pp. 4562-4565 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
B. S. Elman ◽  
C. A. Armiento

2004 ◽  
Vol 46 (1) ◽  
pp. 153-156 ◽  
Author(s):  
V. V. Popov ◽  
T. V. Teperik ◽  
O. V. Polischuk ◽  
X. G. Peralta ◽  
S. J. Allen ◽  
...  

2012 ◽  
Vol 37 (19) ◽  
pp. 3960 ◽  
Author(s):  
Mohamed Said Rouifed ◽  
Papichaya Chaisakul ◽  
Delphine Marris-Morini ◽  
Jacopo Frigerio ◽  
Giovanni Isella ◽  
...  

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