Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Amano ◽  
T. Takeuchi ◽  
S. Sota ◽  
H. Sakai ◽  
I. Akasaki
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Wells ◽  
Stark Effect ◽  
Compressive Strain ◽  
Ternary Alloys ◽  
Luminescence Properties ◽  
Structural And Optical Properties ◽  
Quantum Confined Stark Effect ◽  
Quantum Well Structure

ABSTRACTStructural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.

Effect of Electric Fields in Coupled Double Quantum Wells

1987 ◽  
Vol 102 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
B. Elman ◽  
C. A. Armiento
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Stark Effect ◽  
Double Quantum ◽  
Single Quantum Well ◽  
Quantum Confined Stark Effect ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Novel Structure

ABSTRACTWe present a detailed experimental study of the influence of electric fields on exciton states in a GaAs/AlGaAs coupled double quantum well structure and discuss the advantages of using this novel structure. The coupling of electronic states in the two quantum wells, due to the narrowness of the barrier between them, leads to an enhancement of the quantum-confined Stark effect (by as much as five times that of the single quantum well case). From the measured energies of the exciton transitions, splittings of the levels in a coupled double quantum well structure were derived without recourse to a theoretical model.

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct quantum-confined Stark effect

2012 ◽  
Vol 111 (6) ◽  
pp. 063701 ◽  
Author(s):  
Marko Stölzel ◽  
Johannes Kupper ◽  
Matthias Brandt ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Stark Effect ◽  
Electronic And Optical Properties ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Quantum-confined Stark effect at 13 μm in Ge/Si_035Ge_065 quantum-well structure

2012 ◽  
Vol 37 (19) ◽  
pp. 3960 ◽  
Author(s):  
Mohamed Said Rouifed ◽  
Papichaya Chaisakul ◽  
Delphine Marris-Morini ◽  
Jacopo Frigerio ◽  
Giovanni Isella ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Well Structure ◽  
Quantum Confined

Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure

1999 ◽  
Vol 38 (Part 2, No. 8B) ◽  
pp. L914-L916 ◽  
Author(s):  
Takahiro Deguchi ◽  
Kaoru Sekiguchi ◽  
Atsushi Nakamura ◽  
Takayuki Sota ◽  
Ryuji Matsuo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Confined Stark Effect ◽  
Quantum Well Structure ◽  
Quantum Confined

Spontaneous Emission Rate and Radiative Current Density in p-GaAs/i-GaNAsBi/n-GaAs Quantum Well Lasers

2019 ◽  
Vol 16 (11) ◽  
pp. 4474-4478
Author(s):  
Ikram Hassouna Guizani ◽  
Ahmed Alhadi Rebey
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spontaneous Emission ◽  
Current Density ◽  
Stark Effect ◽  
Emission Rate ◽  
Spontaneous Emission Rate ◽  
Doping Density ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect

We have theoretically investigated the 1.55 μm emission of p–i–n GaNAsBi-based quantum wells (QWs) using a self-consistent calculation combined with (16×16) BAC model. Their performances are evaluated in terms of spontaneous emission rate Rsp and radiative current density Jrad. We have found that Jrad increases as function of the injected carrier density as well as the doping density. The quantum confined Stark effect on radiative current density in ideal lasers is also discussed. The radiative current density versus well width for simple and double p-GaAs/i-GaN·58yAs1-1·58yBiy/n-GaAs quantum well structures is also examined. We have obtained that Jrad increases with increase average thickness of GaNAsBi active region. The optimization of well parameters can be used as a basis for GaNAsBi-based lasers intended for optical fiber telecommunication wavelength.

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