Development of Low-Cost Multi-Watt Yellow Lasers Using InGaAs/GaAs Vertical External-Cavity Surface-Emitting Lasers

2008 ◽  
Vol 1076 ◽  
Author(s):  
Mahmoud Fallahi ◽  
Li Fan ◽  
Chris Hessenius ◽  
Jorg hader ◽  
Hongbo Li ◽  
...  

ABSTRACTWe demonstrate a highly strained InGaAs/GaAs VECSEL operating at 1173 nm with more than 8.5 W output power and tunable over 40 nm. High-efficiency yellow-orange emission is then achieved by intra-cavity frequency doubling. Over 5 W of CW output power in the 585-589 nm spectral regions is achieved. This compact low-cost high-power yellow-orange laser provides an innovative alternative for sodium guidestar lasers or other medical / communication applications.

2005 ◽  
Vol 86 (21) ◽  
pp. 211116 ◽  
Author(s):  
L. Fan ◽  
M. Fallahi ◽  
J. Hader ◽  
A. R. Zakharian ◽  
M. Kolesik ◽  
...  

2014 ◽  
Vol 60 (3) ◽  
pp. 239-245 ◽  
Author(s):  
Adam K. Sokoł ◽  
Robert P. Sarzała

Abstract The paper is devoted to a numerical analysis of an influence of a pumping beam diameter on output power of optically pumped vertical-external-cavity surface-emitting lasers. Simulations have been carried out for a structure with a GaInNAs/GaAs active region operating at 1.32 urn. Various assembly configurations have been considered. Results obtained show that laser power scaling is strongly affected by thermal properties of the device.


2006 ◽  
Vol 88 (25) ◽  
pp. 251117 ◽  
Author(s):  
Li Fan ◽  
Ta-Chen Hsu ◽  
Mahmoud Fallahi ◽  
James T. Murray ◽  
Robert Bedford ◽  
...  

2019 ◽  
Vol 9 (3) ◽  
pp. 416 ◽  
Author(s):  
Masaru Kuramoto ◽  
Seiichiro Kobayashi ◽  
Takanobu Akagi ◽  
Komei Tazawa ◽  
Kazufumi Tanaka ◽  
...  

High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO2-buried lateral index guide and adjusting the front mirror reflectivity. Lateral optical confinement has been shown to greatly lower the otherwise significant loss of transverse radiation exhibited by typical VCSELs based on GaN. Employing a long (10λ) cavity can also enhance the output power, by lowering the thermal resistance of the VCSEL and increasing the operating current associated with thermal rollover. This modification, in conjunction with optimized front mirror reflectivity and a buried SiO2 lateral index guide, results in a blue VCSEL (in the continuous wave mode with an 8 μm aperture at 20 °C) having a superior differential quantum efficiency value of 31% and an enhanced 15.7 mW output power. This unit also exhibits a relatively high output power of 2.7 mW at temperatures as high as 110 °C. Finally, a 5.5 μm aperture VCSEL was found to generate a narrow divergence (5.1°) single-lobe far field pattern when operating at an output power of approximately 5 mW.


2006 ◽  
Vol 31 (24) ◽  
pp. 3612 ◽  
Author(s):  
Li Fan ◽  
Mahmoud Fallahi ◽  
Jörg Hader ◽  
Aramais R. Zakharian ◽  
Jerome V. Moloney ◽  
...  

2014 ◽  
Vol 104 (23) ◽  
pp. 231105 ◽  
Author(s):  
A. Khiar ◽  
V. Volobuev ◽  
M. Witzan ◽  
A. Hochreiner ◽  
M. Eibelhuber ◽  
...  

2007 ◽  
Vol 90 (12) ◽  
pp. 121104 ◽  
Author(s):  
Mikel Arizaleta Arteaga ◽  
Olivier Parriaux ◽  
Manuel López-Amo ◽  
Hugo Thienpont ◽  
Krassimir Panajotov

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