Effect of Back-Surface Reflectors on the Performance of Strain-Balanced Quantum Well Solar Cells

2008 ◽  
Author(s):  
Jessica Adams ◽  
Ravin Ginige ◽  
James Connolly ◽  
Ian Ballard ◽  
Benjamin Browne ◽  
...  
Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Chi Zhang ◽  
Zhiyuan He ◽  
Xuanhui Luo ◽  
Rangwei Meng ◽  
Mengwei Chen ◽  
...  

AbstractIn this work, inorganic tin-doped perovskite quantum dots (PQDs) are incorporated into carbon-based perovskite solar cells (PSCs) to improve their photovoltaic performance. On the one hand, by controlling the content of Sn2+ doping, the energy level of the tin-doped PQDs can be adjusted, to realize optimized band alignment and enhanced separation of photogenerated electron–hole pairs. On the other hand, the incorporation of tin-doped PQDs provided with a relatively high acceptor concentration due to the self-p-type doping effect is able to reduce the width of the depletion region near the back surface of the perovskite, thereby enhancing the hole extraction. Particularly, after the addition of CsSn0.2Pb0.8I3 quantum dots (QDs), improvement of the power conversion efficiency (PCE) from 12.80 to 14.22% can be obtained, in comparison with the pristine device. Moreover, the experimental results are analyzed through the simulation of the one-dimensional perovskite/tin-doped PQDs heterojunction.


Solar Energy ◽  
2021 ◽  
Vol 220 ◽  
pp. 211-216
Author(s):  
H.P. Yin ◽  
W.S. Tang ◽  
J.B. Zhang ◽  
W. Shan ◽  
X.M. Huang ◽  
...  

2016 ◽  
Vol 55 (2) ◽  
pp. 022301 ◽  
Author(s):  
Yuanyuan Wu ◽  
Lian Ji ◽  
Pai Dai ◽  
Ming Tan ◽  
Shulong Lu ◽  
...  

2017 ◽  
Author(s):  
Dac-Trung Nguyen ◽  
Laurent Lombez ◽  
Francois Gibelli ◽  
Myriam Paire ◽  
Soline Boyer-Richard ◽  
...  

2014 ◽  
Vol 4 (6) ◽  
pp. 1518-1525 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Naofumi Kasamatsu ◽  
Hiromasa Fujii ◽  
Tomoyuki Kada ◽  
Shigeo Asahi ◽  
...  

2006 ◽  
Vol 23 (1) ◽  
pp. 247-248 ◽  
Author(s):  
Lou Chao-Gang ◽  
Sun Qiang ◽  
Xu Jun ◽  
Zhang Xiao-Bing ◽  
Lei Wei ◽  
...  
Keyword(s):  

2012 ◽  
Vol 51 ◽  
pp. 092301 ◽  
Author(s):  
Xue-Fei Li ◽  
Xin-He Zheng ◽  
Dong-Yan Zhang ◽  
Yuan-Yuan Wu ◽  
Xiao-Ming Shen ◽  
...  

1998 ◽  
Vol 50 (1-4) ◽  
pp. 213-219 ◽  
Author(s):  
Paul Griffin ◽  
Ian Ballard ◽  
Keith Barnham ◽  
Jenny Nelson ◽  
Alexander Zachariou ◽  
...  
Keyword(s):  

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