Non Destructive Optical Analysis of Implanted Layers in GaAs by Raman Scattering and Spectroscopic Ellipsometry

ABSTRACTNon destructive analysis by Raman Scattering (RS) and Spectroscopic Ellipsometry (SE) is demonstrated on B+- and Se+ shallow implanted GaAs. Qualitative informations are obtained from 1st and 2nd order RS spectra. The former are analysed using the intensity ratio of the T0 and L0 modes, which defines a lattice potential perfection scale. The SE analysis of the E1, E1 +Δ1 structure in the imaginary part of the dielectric function confirms the RS results and its multilayer analysis yields the depth profile of the implanted ions.

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Discrimination of Falsified Erectile Dysfunction Medicines by Use of an Ultra-Compact Raman Scattering Spectrometer

Pharmacy ◽

10.3390/pharmacy9010003 ◽

2020 ◽

Vol 9 (1) ◽

pp. 3

Author(s):

Tomoko Sanada ◽

Naoko Yoshida ◽

Kazuko Kimura ◽

Hirohito Tsuboi

Keyword(s):

Raman Scattering ◽

Raman Spectra ◽

Principal Component ◽

Detection Methods ◽

Score Plot ◽

Raman Scattering Spectroscopy ◽

Standard Product ◽

Destructive Analysis ◽

Falsified Medicines ◽

Non Destructive

Substandard and falsified medicines are often reported worldwide. An accurate and rapid detection method for falsified medicines is needed to prevent human health hazards. Raman scattering spectroscopy has emerged as a non-destructive analysis method for the detection of falsified medicines. In this laboratory study, Raman spectroscopy was performed to evaluate the applicability of the ultra-compact Raman scattering spectrometer (C13560). Principal component analysis (PCA) was also performed on the Raman spectra. This study analyzed tadalafil (Cialis), vardenafil (Levitra), and sildenafil (Viagra) tablets. We tested the standard product and products purchased from the internet (genuine or falsified). For Cialis and Levitra, all falsified tablets were identified by the Raman spectra and PCA score plot. For Viagra, the Raman spectra of some falsified tablets were almost comparable to the standard tablet. The PCA score plots of falsified tablets were dispersed, and some plots of falsified tablets were close to the standard tablet. In conclusion, C13560 was useful for the discrimination of falsified Cialis and Levitra tablets, whereas some falsified Viagra tablets had Raman spectra similar to that of the standard tablet. The development of detection methods that can be introduced in various settings may help prevent the spread of falsified products.

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“Dry-state” surface-enhanced Raman scattering (SERS): toward non-destructive analysis of dyes on textile fibers

Applied Physics A ◽

10.1007/s00339-016-0209-2 ◽

2016 ◽

Vol 122 (7) ◽

Cited By ~ 10

Author(s):

Chiara Zaffino ◽

Hoan Thanh Ngo ◽

Janna Register ◽

Silvia Bruni ◽

Tuan Vo-Dinh

Keyword(s):

Raman Scattering ◽

Surface Enhanced Raman Scattering ◽

Textile Fibers ◽

Surface Enhanced ◽

Destructive Analysis ◽

Surface Enhanced Raman ◽

Enhanced Raman Scattering ◽

Non Destructive

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Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.3549806 ◽

2011 ◽

Vol 109 (5) ◽

pp. 053504 ◽

Cited By ~ 8

Author(s):

S. Rogowsky ◽

M. Baeumler ◽

M. Wolfer ◽

L. Kirste ◽

R. Ostendorf ◽

...

Keyword(s):

Raman Scattering ◽

Dielectric Function ◽

Spectroscopic Ellipsometry ◽

Vibrational Mode

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Local Crystal Orientation in Laser Annealed Silicon Using a Raman Microprobe

MRS Proceedings ◽

10.1557/proc-29-231 ◽

1983 ◽

Vol 29 ◽

Cited By ~ 1

Author(s):

L. A. Farrow ◽

J.B. Hopkins ◽

G J Fisanick

Keyword(s):

Crystal Structure ◽

Raman Scattering ◽

Crystal Orientation ◽

Polarization Angle ◽

Substrate Plane ◽

Si Substrate ◽

Intensity Measurements ◽

Raman Microprobe ◽

Destructive Analysis ◽

Non Destructive

ABSTRACTIn this paper, we discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, non-destructive analysis of the local crystal orientation of a polysilicon sample grown over SiO 2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane, as well as the degree of tipping of the crystal plane away from the plane of the Si substrate. The results give some indication as to the direction of seeding during recrystallization.

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