Electron Trapping in Amorphous Silicon - A Quantum Molecular Dynamics Study
Keyword(s):
ABSTRACTQuantum molecular dynamics (QMD) simulations provide the real-time dynamics of electrons and ions through numerical solutions of the time-dependent Schrodinger and Newton equations, respectively. Using the QMD approach we have investigated the localization behavior of an excess electron in amorphous silicon at finite temperatures. For time scales on the order of a few picoseconds, we find the excess electron is localized inside a void of radius ∼ 3 Å at finite temperatures.
1993 ◽
Vol 98
(7)
◽
pp. 5679-5693
◽
1999 ◽
Vol 103
(47)
◽
pp. 9383-9383
◽
2015 ◽
Vol 17
(30)
◽
pp. 19797-19805
◽
2007 ◽
Vol 41
(2)
◽
pp. 315-331
◽
Keyword(s):
1991 ◽
Vol 184
(1-3)
◽
pp. 69-75
◽
2003 ◽
Vol 109
(5)
◽
pp. 251-267
◽
2010 ◽
Vol 108
(21-23)
◽
pp. 3213-3222
◽