Development of liquid crystal light valves using Bi12SiO20 as the photoconductor. Part 2: Device performance

1986 ◽  
Vol 133 (1) ◽  
pp. 65
Author(s):  
W.L. Baillie ◽  
P.M. Openshaw ◽  
A.D. Hart ◽  
S.S. Makh
Keyword(s):  
Liquid Crystal ◽  
Device Performance

Study of a-Si:H/μc-Si:H Heterojunction as Photosensor for Large Screen Projection Display

1992 ◽  
Vol 258 ◽  
Author(s):  
Weiqiang Han ◽  
Gaorong Han ◽  
Jianmin Qiao ◽  
Pija Du ◽  
Danmei Zhao ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Glow Discharge ◽  
Device Performance ◽  
Blocking Layer ◽  
Large Screen ◽  
Cvd Method ◽  
Projection Display ◽  
Large Screen Projection ◽  
Deposition Conditions ◽  
Structure Properties

ABSTRACTLiquid crystal light valve(LCLV) using an a-Si:H/μc-Si:H heterostructure as the photosensor and the nematic liquid crystal as the modulator has been firstly presented for large screen projection display. The a-Si:H photoconductor and μc-Si:H light blocking layer were prepared by a modified glow discharge CVD method. The optoelectric and structure properties of the μc-Si:H films deposited at different deposition conditions have been studied. The a-Si:H film and the continuously deposited pc-Si:H film possibly form an a-Si:H/μc-Si:H heterojunction. The electrical and optoelectric properties of the heterojunction has been studied.LCLV using a-Si:H/μc-Si:H heterostructure has shown that the most aspects of the device performance can be improved.

Electroluminescent Diodes Using Cyclohexane-Based Glass Forming Liquid Crystals and Their Analogues

1996 ◽  
Vol 425 ◽  
Author(s):  
C. P. Lin ◽  
T. Tsutsui ◽  
S. Saito ◽  
S. H. Chen ◽  
J. C. Mastrangelo ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Electron Transport ◽  
Charge Transport ◽  
Single Layer ◽  
Hole Transport ◽  
Device Performance ◽  
Glass Forming ◽  
Two Component ◽  
Organic Electroluminescent ◽  
Transport Molecules

AbstractOrganic electroluminescent(EL) diodes using spin-coat films of cyclohexane-based glass-forming liquid crystal (LC) materials were fabricated. The cyclohexane-based LC materials were found to be useful for EL diodes. Blending the LC materials with charge transport molecules was found to be a promising method for improving device performance. Conventional hole transport and electron transport molecules were found to show a tendency to form exciplexes with cyclohexanebased LC materials. This difficulty was overcome by the introduction of cyclohexane-based charge transport molecules. The EL quantum efficiency of 0.06% was attained in the single-layer devices with two-component blends.

scholarly journals Organic liquid-crystal devices based on ionic conductors

2017 ◽  
Vol 4 (6) ◽  
pp. 1102-1109 ◽  
Author(s):  
Can Hui Yang ◽  
Shuang Zhou ◽  
Samuel Shian ◽  
David R. Clarke ◽  
Zhigang Suo
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystals ◽  
Organic Liquid ◽  
Device Performance ◽  
Ionic Conductors ◽  
Liquid Crystal Devices

We use hydrogels to drive liquid crystals, achieving stretchable electrooptics. The device performance was maintained under a biaxial stretch of 1.5.

scholarly journals Planar liquid crystal polarization optics for augmented reality and virtual reality: from fundamentals to applications

eLight ◽  
2021 ◽  
Vol 1 (1) ◽  
Author(s):  
Jianghao Xiong ◽  
Shin-Tson Wu
Keyword(s):  
Virtual Reality ◽  
Liquid Crystal ◽  
Augmented Reality ◽  
Photonic Devices ◽  
Device Fabrication ◽  
Device Performance ◽  
Optical Elements ◽  
Polarization Optics ◽  
Potential Applications ◽  
And Performance

AbstractPlanar and ultrathin liquid crystal (LC) polarization optical elements have found promising applications in augmented reality (AR), virtual reality (VR), and photonic devices. In this paper, we give a comprehensive review on the operation principles, device fabrication, and performance of these optical elements. Optical simulations methods for optimizing the device performance are discussed in detail. Finally, some potential applications of these devices in AR and VR systems are illustrated and analyzed.

Degradation of liquid crystal device performance due to selective adsorption of ions

1996 ◽  
Vol 69 (9) ◽  
pp. 1182-1184 ◽  
Author(s):  
S. H. Perlmutter ◽  
D. Doroski ◽  
G. Moddel
Keyword(s):  
Liquid Crystal ◽  
Selective Adsorption ◽  
Device Performance ◽  
Liquid Crystal Device

scholarly journals Preparation of Luminescent Thermotropic Liquid Crystal from Benzodiathiazole Derivatives

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1919
Author(s):  
Yuchen Feng ◽  
Huijuan Yu ◽  
Dexun Xie ◽  
Yi Zhu ◽  
Xinhao Zhong ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Fluorescence Quantum Yield ◽  
Alkyl Chain ◽  
Research Topic ◽  
Device Fabrication ◽  
Device Performance ◽  
Thermotropic Liquid Crystal ◽  
Liquid Crystal Material ◽  
Fluorescent Materials ◽  
The Stability

Luminescent liquid crystal materials (LLCMs) have been a hot research topic in the field of fluorescent materials. In this study, we successfully designed and synthesized an intense fluorescence thermotropic liquid crystal material with a fluorescence quantum yield (Φ) of 0.26 in the solid state. Moreover, the alkyl chain attached to the terminus of the chromophore was able to promote the stability of electrochemical and thermal properties, which was beneficial to the device fabrication reproducibility and stability of the device performance.

Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

1991 ◽  
Vol 49 ◽  
pp. 896-897
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling
Keyword(s):  
Chemical Vapor ◽  
Device Performance ◽  
Particle Characterization ◽  
Particle Generation ◽  
Tungsten Hexafluoride ◽  
Homogeneous Particle ◽  
Multiple Levels ◽  
Circuit Density ◽  
Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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