Current Status of and Recent Results on Group 2 Source Compounds for Vapor Phase Epitaxy of Ferroelectric Thin Films

Much interest in the area of ferroelectric thin films has been generated by the recent developments in unique property observation for these materials. As deposition methods move toward potential commercialization, the importance of chemically and thermally stable at use temperature, high vapor pressure and purity, readily available and economically competitive sources for the requisite group 2 elements will emerge. This presentation entails an initial overview of the presently utilized compounds, their advantages and disadvantages. New group 2 CVD precursors have been developed based both on inter- and intramolecular stabilization of cyclopentadienides, alkoxides and β-diketonates. Recent results on the coordination environment around the central metal atom have offered insight into the next generation of polydentate, monoanionic ligand design. Specific details are discussed for the metal complexes of “scorpion-tail” β-diketoethers. Results of comparison studies between these new precursors and earlier compounds are presented as a model for designing future sources.