Raman Scattering Study of Interface Reactions of Co/SiGe

1993 ◽  
Vol 320 ◽  
Author(s):  
Hong Ying ◽  
Zhihai Wang ◽  
D. B. Aldrich ◽  
D. E. Sayers ◽  
R. J. Nemanich

ABSTRACTRaman scattering measurements are used to characterize Co/Si, Co/Ge and CO/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co--CoSi--CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge 7 and CoGe2 phases were observed. For CO/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

1986 ◽  
Vol 55 (11) ◽  
pp. 3903-3917 ◽  
Author(s):  
Tomoyuki Sekine ◽  
Michio Takayama ◽  
Kunimitsu Uchinokura ◽  
Etsuyuki Matsuura

2006 ◽  
Vol 18 (17) ◽  
pp. 4315-4327 ◽  
Author(s):  
E Angot ◽  
R Le Parc ◽  
C Levelut ◽  
M Beaurain ◽  
P Armand ◽  
...  

1996 ◽  
Vol 35 (Part 1, No. 9B) ◽  
pp. 5192-5195 ◽  
Author(s):  
Seiji Kojima ◽  
Yasuo Ikeuchi ◽  
Huang Zhunchang ◽  
Yin Qingrui

2002 ◽  
Vol 66 (13) ◽  
Author(s):  
A. G. Souza Filho ◽  
K. C. V. Lima ◽  
A. P. Ayala ◽  
I. Guedes ◽  
P. T. C. Freire ◽  
...  

2005 ◽  
Vol 178 (9) ◽  
pp. 2846-2857 ◽  
Author(s):  
Sanjay Kumar Mishra ◽  
Rajeev Ranjan ◽  
Dhananjai Pandey ◽  
Pierre Ranson ◽  
Robert Ouillon ◽  
...  

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