Perturbed -Angular -Correlation Spectroscopy on Indium- and Cadmium- Complexes in Silicon Carbide
Keyword(s):
ABSTRACTComplex formation at indium and cadmium impurities implanted into samples of 3C-, 4H-and 6H- SiC was investigated by means of Perturbed Angular Correlation (PAC)-Spectroscopy. After annealing at 1600 K up to five different configurations characterized by their specific electric field gradients (EFG(i)) were observed in 6H- SiC, only four complexes in 4H- SiC; in the 3C- modification no complex was observed. All EFG's are axially symmetric and are oriented along the c- axis of the crystal. In a highly nitrogen doped 6H- SiC epi- layer an new EFG was observed. It is tentatively assigned to a close indium- nitrogen pair.
1979 ◽
Vol 70
(9)
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pp. 4117-4122
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1985 ◽
Vol 18
(1)
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pp. 1-64
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1991 ◽
Vol 50
(1-4)
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pp. 159-164
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