A Nuclear Reaction Analysis Technique to Determine The Penetration of Hydrogenic Species into Glasses Exposed to Leaching Solutions

1984 ◽  
Vol 44 ◽  
Author(s):  
L. M. Gignac ◽  
C. J. Altstetter ◽  
S. D. Brown

AbstractNuclear reaction analysis is discussed as a method for determining the distribution of deuterium beneath the surfaces of glasses exposed to heavy water solutions for various times and temperatures. Limited examples of both conventional depth profiling for deuterium and a new technique for deuterium mapping are presented. The possible use of deuterium mapping for investigating the kinetics and mechanisms of the leaching of glasses is discussed.

2008 ◽  
Author(s):  
John Kennedy ◽  
Peter Murmu ◽  
Andreas Markwitz ◽  
Edmund G. Seebauer ◽  
Susan B. Felch ◽  
...  

1993 ◽  
Vol 316 ◽  
Author(s):  
Oleg I. Zabashta ◽  
A.I. Kul'ment'ev ◽  
V.E. Storizko

The general problem in the analysis of a sample by non-destructive techniques such as nuclear microanalysis, ellipsometry, etc. is the interpretation of the measured data. The impurity depth profile obtained may noticeable non-physical fluctuations. From the mathematical point of view this could be explain by the fact that while interpreting the results we have to solve an incorrect problem to which routine computational methods are not applicable.


2017 ◽  
Vol 360 ◽  
pp. 129-135 ◽  
Author(s):  
Adam Schulz ◽  
Hassaram Bakhru ◽  
Don DeRosa ◽  
Seiichiro Higashiya ◽  
Manisha Rane-Fondacaro ◽  
...  

1995 ◽  
Vol 405 ◽  
Author(s):  
H. Schwenke ◽  
J. Knoth ◽  
R. Günther ◽  
G. Wiener ◽  
R. Bormann

AbstractA new technique is presented for the determination of concentration depth profiles. Surface atoms are sputtered by an ion beam and deposited on a clean silicon wafer. The wafer is rotated behind a slit in step with the sputtering progress. In this way the depth profile of the sample is transferred into a lateral distribution of the sputtered atoms on the target wafer. Subsequently the wafer is scanned by Total Reflection X-ray Fluorescence Spectrometry (TXRF) which is capable of detecting traces of metallic impurities on wafers down to 10-4 of an atomic monolayer. The sequence of ion-beam sputtering, deposition of the sputtered atoms and TXRF analysis results in an excellent depth resolution in the case of areal structures. Using an ion source of the Kaufmann type, an extrapolated perpendicular resolution better than 0.1 nm was obtained for a 1500 mm2 surface. For a surface area of 3 mm2 a depth resolution of 1 nm is expected. 1.4 nm was actually measured to be the width of a coherent Ti/Al-interface within a layered structure.


2011 ◽  
Vol 294 (3) ◽  
pp. 401-404 ◽  
Author(s):  
G. L. N. Reddy ◽  
Pritty Rao ◽  
J. V. Ramana ◽  
S. Vikramkumar ◽  
V. S. Raju ◽  
...  

2012 ◽  
Vol 323-325 ◽  
pp. 221-226 ◽  
Author(s):  
Hélène Lefaix-Jeuland ◽  
Sandrine Miro ◽  
Fabrice Legendre

Polycrystalline Fe 99.95 and 99.5 samples were implanted with helium at 8 keV and 3 MeV. Thermal Desorption Spectroscopy (TDS) and Nuclear Reaction Analysis (NRA) provided a complementary set of techniques to characterize helium-materials interactions within two different implantation depths, respectively close to the surface and in the bulk. Using TDS, it was possible to get information about the nature and the states of the structures where helium was trapped in radiation damaged Fe specimens. Activation energies for every trapping site (mono-vacancies, clusters) have been determined from conventional reaction model. The effect of interstitial carbon was also discussed, and compared with previous ab-initio studies. Moreover, the helium bulk diffusion constants in radiation damaged structures could be derived from non destructive 3He depth profiling. Preliminary observations highlighted that a few part of He remained trapped while helium bubbles migrated in the bulk.


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