Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System
Keyword(s):
AbstractThe Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.
1996 ◽
Vol 53
(16)
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pp. R10493-R10496
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1993 ◽
Vol 47
(19)
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pp. 12727-12731
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