Characterization of Vacancy-Type Defects in Ion Implanted and Annealed SiC by Positron Annihilation Spectroscopy

1997 ◽  
Vol 504 ◽  
Author(s):  
W. Anwand ◽  
G. Brauer ◽  
P. G. Coleman ◽  
W. Skorupa
Keyword(s):  
Substrate Temperature ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Post Irradiation ◽  
Established Technique ◽  
Ion Implanted

ABSTRACTNew examples of characterization of vacancy-type defects in ion implanted and annealed SiC by the established technique of slow positron implantation spectroscopy are presented. In particular, the estimation of the depths of damaged regions and their change (a) after post-irradiation annealing, or (b) due to variation of substrate temperature during implantation, is addressed.

Characterization of Atomic Defects and Their Aggregates Using Positron Annihilation Spectroscopy

1984 ◽  
Vol 41 ◽  
Author(s):  
R. W. Siegel ◽  
M. J. Fluss ◽  
L. C. Smedskjaer
Keyword(s):  
Electronic Structure ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Molecular Solids ◽  
Microstructure Development ◽  
Post Irradiation ◽  
Defect Sites ◽  
Atomic And Electronic Structure

AbstractPositrons localize in trapped states at a variety of defect sites in solids, from which they subsequently annihilate with unique observable characteristics. As such, the positron is a valuable probe for the study of these defects. Positron annihilation spectroscopy (PAS) has made significant contributions in recent years to the determination of atomic defect properties in metals and alloys, and in molecular solids as well. It has also been used extensively in the monitoring and characterization of vacancy-like microstructure development, as occurs during post-irradiation annealing. The characterization of defects using PAS is selectively reviewed and some possibilities for using the positron as a localized probe of the atomic and electronic structure of atomic defects and their aggregates are discussed.

scholarly journals The Characterization of MgB2 Thin Film by Slow Positron Annihilation Spectroscopy

2008 ◽  
Vol 17 (2) ◽  
pp. 160-164 ◽  
Author(s):  
C.Y. Lee ◽  
W.N. Kang ◽  
Y. Nagai ◽  
K. Inoue ◽  
M. Hasegawa
Keyword(s):  
Thin Film ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Mgb2 Thin Film

Characterization of ethylcellulose free films by positron annihilation spectroscopy and mechanical testing

2014 ◽  
Vol 115 ◽  
pp. 47-50 ◽  
Author(s):  
Diána Hegyesi ◽  
Károly Süvegh ◽  
András Kelemen ◽  
Klára Pintye-Hódi ◽  
Géza Regdon
Keyword(s):  
Positron Annihilation ◽  
Mechanical Testing ◽  
Positron Annihilation Spectroscopy ◽  
Free Films

Study of the photodegradation of epoxy polymers with slow positron annihilation spectroscopy

2004 ◽  
Vol 42 (13) ◽  
pp. 2441-2459 ◽  
Author(s):  
R. Zhang ◽  
X. Gu ◽  
H. Chen ◽  
J. Zhang ◽  
Y. Li ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Epoxy Polymers

scholarly journals Free-volume Characterization of Polysilanes Using Positron Annihilation Spectroscopy.

1999 ◽  
Vol 12 (5) ◽  
pp. 739-742
Author(s):  
Mutsumi Tashiro ◽  
Shu Seki ◽  
Pradeep K. Pujari ◽  
Yoshihide Honda ◽  
Seiichi Tagawa
Keyword(s):  
Positron Annihilation ◽  
Free Volume ◽  
Positron Annihilation Spectroscopy

scholarly journals Microstructural characterization of alumina–zirconia layered ceramics using positron annihilation spectroscopy

2010 ◽  
Vol 58 (8) ◽  
pp. 3014-3021 ◽  
Author(s):  
P. Parente ◽  
Y. Ortega ◽  
B. Savoini ◽  
M.A. Monge ◽  
A. Tucci ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Microstructural Characterization ◽  
Positron Annihilation Spectroscopy ◽  
Layered Ceramics
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