Characterization of defects in self‐ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy

1996 ◽  
Vol 79 (12) ◽  
pp. 9017-9021 ◽  
Author(s):  
M. Fujinami ◽  
A. Tsuge ◽  
K. Tanaka
1997 ◽  
Vol 504 ◽  
Author(s):  
W. Anwand ◽  
G. Brauer ◽  
P. G. Coleman ◽  
W. Skorupa

ABSTRACTNew examples of characterization of vacancy-type defects in ion implanted and annealed SiC by the established technique of slow positron implantation spectroscopy are presented. In particular, the estimation of the depths of damaged regions and their change (a) after post-irradiation annealing, or (b) due to variation of substrate temperature during implantation, is addressed.


2014 ◽  
Vol 115 ◽  
pp. 47-50 ◽  
Author(s):  
Diána Hegyesi ◽  
Károly Süvegh ◽  
András Kelemen ◽  
Klára Pintye-Hódi ◽  
Géza Regdon

1999 ◽  
Vol 12 (5) ◽  
pp. 739-742
Author(s):  
Mutsumi Tashiro ◽  
Shu Seki ◽  
Pradeep K. Pujari ◽  
Yoshihide Honda ◽  
Seiichi Tagawa

2010 ◽  
Vol 58 (8) ◽  
pp. 3014-3021 ◽  
Author(s):  
P. Parente ◽  
Y. Ortega ◽  
B. Savoini ◽  
M.A. Monge ◽  
A. Tucci ◽  
...  

2018 ◽  
Vol 505 ◽  
pp. 69-72 ◽  
Author(s):  
Te Zhu ◽  
Shuoxue Jin ◽  
Peng Zhang ◽  
Ligang Song ◽  
Xiangyu Lian ◽  
...  

2011 ◽  
Vol 509 (7) ◽  
pp. 3211-3218 ◽  
Author(s):  
Alena Michalcová ◽  
Dalibor Vojtěch ◽  
Jakub Čížek ◽  
Ivan Procházka ◽  
Jan Drahokoupil ◽  
...  

2016 ◽  
Vol 108 (24) ◽  
pp. 242102 ◽  
Author(s):  
M. R. M. Elsharkawy ◽  
G. S. Kanda ◽  
E. E. Abdel-Hady ◽  
D. J. Keeble

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