Characterization of defects in self‐ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy
Keyword(s):
1999 ◽
Vol 12
(5)
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pp. 739-742
1995 ◽
Vol 196-201
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pp. 1165-1170
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Keyword(s):
2011 ◽
Vol 509
(7)
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pp. 3211-3218
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