Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

1995 ◽  
Vol 196-201 ◽  
pp. 1165-1170 ◽  
Author(s):  
Masanori Fujinami ◽  
S. Hayashi
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Defect Behavior ◽  
Ion Implanted

Characterization of Vacancy-Type Defects in Ion Implanted and Annealed SiC by Positron Annihilation Spectroscopy

1997 ◽  
Vol 504 ◽  
Author(s):  
W. Anwand ◽  
G. Brauer ◽  
P. G. Coleman ◽  
W. Skorupa
Keyword(s):  
Substrate Temperature ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Post Irradiation ◽  
Established Technique ◽  
Ion Implanted

ABSTRACTNew examples of characterization of vacancy-type defects in ion implanted and annealed SiC by the established technique of slow positron implantation spectroscopy are presented. In particular, the estimation of the depths of damaged regions and their change (a) after post-irradiation annealing, or (b) due to variation of substrate temperature during implantation, is addressed.

Study of the photodegradation of epoxy polymers with slow positron annihilation spectroscopy

2004 ◽  
Vol 42 (13) ◽  
pp. 2441-2459 ◽  
Author(s):  
R. Zhang ◽  
X. Gu ◽  
H. Chen ◽  
J. Zhang ◽  
Y. Li ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Epoxy Polymers

A comparative study of defects in LiF implanted with 100 KeV Al+, Mg+and Ar+by slow Positron Annihilation Spectroscopy

2001 ◽  
Vol 155 (1-4) ◽  
pp. 139-144 ◽  
Author(s):  
E. J. Sendezera ◽  
A. T. Davidson ◽  
A. G. Kozakiewicz ◽  
W. Anwand ◽  
G. Brauer ◽  
...  
Keyword(s):  
Comparative Study ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

He-implantation induced defects in Si studied by slow positron annihilation spectroscopy

1999 ◽  
Vol 85 (4) ◽  
pp. 2390-2397 ◽  
Author(s):  
R. S. Brusa ◽  
G. P. Karwasz ◽  
N. Tiengo ◽  
A. Zecca ◽  
F. Corni ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Induced Defects

scholarly journals Development of Positron Microbeam in AIST

2008 ◽  
Vol 607 ◽  
pp. 238-242 ◽  
Author(s):  
Nagayasu Oshima ◽  
Ryoichi Suzuki ◽  
Toshiyuki Ohdaira ◽  
Atsushi Kinomura ◽  
T. Narumi ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Spatial Resolution ◽  
Transport System ◽  
Linear Accelerator ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Beam Size ◽  
Electron Linear Accelerator ◽  
Slow Positron ◽  
Magnetic Transport

To improve the spatial resolution of positron annihilation spectroscopy (PAS), a system to produce an intense positron microbeam was developed in AIST. A slow positron beam, which was produced by an electron linear accelerator, was focused by a lens onto a remoderator to enhance its brightness. The brightness-enhanced beam with an intensity of ≈1 × 106 e+/s was extracted from the remoderator and focused onto the sample by a lens. The beam size at the sample was 25 μm, which is more than two and half orders of magnitude smaller than that in the magnetic transport system (≈10 mm). Hence, the spatial resolution of PAS with an AIST positron microbeam can be drastically improved relative to PAS using conventional methods.

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