Role of the Collecting Resistive Layer on the Static Characteristics of 2D a-Si:H thin Film Position Sensitive Detector

1998 ◽  
Vol 507 ◽  
Author(s):  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Analytical Model ◽  
Sensitive Detector ◽  
Static Characteristics ◽  
Resistive Layer ◽  
Position Sensitive ◽  
Predicted Values ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to present an analytical model able to interpret the role of the thin collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated pin thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

Thin film position sensitive detectors based on pin amorphous silicon carbide structures

2001 ◽  
Vol 184 (1-4) ◽  
pp. 443-447 ◽  
Author(s):  
A. Cabrita ◽  
J. Figueiredo ◽  
L. Pereira ◽  
H. Águas ◽  
V. Silva ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Position Sensitive ◽  
Position Sensitive Detectors

Large Area Position Sensitive Detector Based on Amorphous Silicon Technology

1993 ◽  
Vol 297 ◽  
Author(s):  
E. Fortunato ◽  
M. Vieira ◽  
L. Ferreira ◽  
C.N. Carvalho ◽  
G. Lavareda ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Position Sensitive Detector ◽  
Back Side ◽  
Sensitive Detector ◽  
Metal Contacts ◽  
Key Factors ◽  
Large Area ◽  
Position Sensitive

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/A1 structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.

New ultra-light flexible large area thin film position sensitive detector based on amorphous silicon

2000 ◽  
Vol 266-269 ◽  
pp. 1213-1217 ◽  
Author(s):  
E. Fortunato ◽  
I. Ferreira ◽  
F. Giuliani ◽  
P. Wurmsdobler ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Large Area ◽  
Position Sensitive

Thin film position sensitive detector based on amorphous silicon p–i–n diode

1994 ◽  
Vol 65 (12) ◽  
pp. 3784-3786 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Manuela Vieira ◽  
Rodrigo Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Position Sensitive

Application of Amorphous Silicon Thin-Film Position-Sensitive Detector to Optical Rules

2001 ◽  
Vol 3 (3) ◽  
pp. 174-177 ◽  
Author(s):  
R. Martins ◽  
P. Teodoro ◽  
F. Soares ◽  
I. Ferreira ◽  
N. Guimarães ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Silicon Thin Film ◽  
Position Sensitive

Performances presented by large-area thin film position-sensitive detectors based on amorphous silicon

1996 ◽  
Vol 272 (1) ◽  
pp. 148-156 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Fernando Soares ◽  
Rodrigo Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors
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