Transmutation Doping of III-Nitrides
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ABSTRACTTransmutation doping of (In, Ga, Al)N compounds by neutron irradiation is a promising and totally unexplored field to date. It is much more effective than that of Si due to large neutron capture cross section and abundance of In, Al and Ga isotopes participating in reaction. This should make the irradiation possible in low-flux reactors and result in smaller radiation damage. Annealing of the radiation damage seems feasible.
2003 ◽
Vol 40
(7)
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pp. 447-456
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1961 ◽
Vol 21
(1-2)
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pp. 1-9
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2002 ◽
Vol 39
(sup2)
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pp. 569-572
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1967 ◽
Vol 28
(1)
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pp. 139-143
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