In Situ Curvature and Diffraction Studies of Pd Films on Si(001) During Solid-State Reaction

2000 ◽  
Vol 615 ◽  
Author(s):  
P. Gergaud ◽  
O. Thomas ◽  
B. Chenevier ◽  
V. Ghetta ◽  
A. Mouroux ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Mechanical Strain ◽  
Detailed Knowledge ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Curvature Measurement ◽  
Measurement Results ◽  
Curvature Measurements

ABSTRACTThe stress evolution during silicide formation from thin metal films on Si substrates is not well understood. It requires a detailed knowledge of the mechanical properties of each substance, i.e. metal, silicide(s) and Si, in the reacting system. In situ curvature measurement generally gives access to the overall force in the layered stack, whereas in situ X-ray diffraction (XRD) provides information about the mechanical strain in each crystalline sublayer. In this study, we performed both in situ XRD and curvature measurements on the Pd/Si(001) system. From both measurements, we found out that the in-plane strain in the metal and in the silicide is compressive. Whereas it decreases all along the solid-state reaction for the silicide, it slightly increases for the metal. We then compared our results with the qualitative model proposed by Zhang and d'Heurle. This model suggests a high compressive stress in the silicide at the very first stage of the reaction. This is in good agreement with our experimental results. Finally, the measured strains were then translated into force per unit width and compared to in-situ curvature measurement results. A good qualitative agreement between these two different measurements was also found.

Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase

2018 ◽  
Vol 51 (4) ◽  
pp. 1133-1140 ◽  
Author(s):  
Andrea Quintero ◽  
Patrice Gergaud ◽  
Joris Aubin ◽  
Jean-Michel Hartmann ◽  
Vincent Reboud ◽  
...  
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Solid State Reaction ◽  
Metastable Phase ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Rich Phase ◽  
X Ray ◽  
Pole Figures

The Ni/Ge0.9Sn0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge0.9Sn0.1) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the ∊-Ni5(Ge0.9Sn0.1)3 metastable phase with a hexagonal structure.

scholarly journals STUDY ON SOLID STATE REACTION INTERDIFFUSION OF Fe-Ti MULTILAYER MODULATED FILMS WITH DYNAMIC IN SITU X-RAY DIFFRACTION

1993 ◽  
Vol 42 (7) ◽  
pp. 1134
Author(s):  
BAI HAI-YANG ◽  
CHEN HONG ◽  
ZHANG YUN ◽  
WANG WEN-KUI
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
X Ray Diffraction ◽  
X Ray

Comparison of PtSi Films Grown by Solid-State Reaction and by E-Beam Co-Evaporation: Thermal Stability in Air at 1000 °C

MRS Advances ◽  
2016 ◽  
Vol 1 (21) ◽  
pp. 1539-1544
Author(s):  
Robert T. Fryer ◽  
Robert J. Lad
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Solid State Reaction ◽  
Grain Morphology ◽  
X Ray Diffraction ◽  
Columnar Grain ◽  
Pt Films ◽  
Granular Morphology ◽  
Oxidation Mechanisms

ABSTRACTTwo different methods were used to synthesize 200 nm thick single-phase, orthorhombic-PtSi films: (i) e-beam co-evaporation (EBC) of Pt and Si onto r-sapphire substrates and (ii) solid-state reaction (SSR) of sputtered Pt films on Si (100) wafers. Morphology, electrical conductivity, and crystalline structure were characterized for as-grown films and for films annealed in air at 1000 °C via scanning electron microscopy (SEM), 4-pt conductivity measurements, andin situX-ray diffraction (XRD). As-grown EBC films exhibit columnar grain morphology and slight (101) crystalline texture, while SSR films exhibit granular morphology with many voids and a strong (002) texture. Above 600 °C, EBC PtSi films rapidly oxidize to form crystalline Pt3Si and amorphous SiO2phases. Around 1000 °C, the Pt3Si phase melts and c-Pt grains nucleate. After air annealing for 6 h at 1000 °C, room-temperature XRD shows that the oxidized EBC films consist of Pt3Si and Pt phases within a SiO2matrix and become electrically insulating. SSR films initially form with a (002) o-PtSi orientation and above 900 °C they recrystallize to preferred (101) texture and exhibit an unchanged electrical conductivity and a stable film morphology during 48 h of air annealing at 1000 °C. Separate oxidation mechanisms are proposed for the two film types.

Stress evolution in a Ti/Al(Si,Cu) dual layer during annealing

2001 ◽  
Vol 673 ◽  
Author(s):  
Ola Bostrom ◽  
Patrice Gergaud ◽  
Olivier Thomas ◽  
Philippe Boivin
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Silicide Formation ◽  
Stress Evolution ◽  
Average Force ◽  
Aluminum Films ◽  
Titanium Aluminum ◽  
Curvature Measurements ◽  
Volume Decrease

ABSTRACTMechanical stress and stress evolution in interconnections may cause reliability problems in IC circuits. It is thus of great importance to understand the origin of this stress.In this paper, the stress evolution during the solid state reaction between blanket titanium and aluminum films has been studied by in-situ substrate curvature measurements. Whereas the formation of TiAl3 is expected to induce large tensile stress because of a global volume decrease of 6-8%, curvature measurements of titanium/aluminum dual layers during annealing at 450°C suggests the formation of a compressive compound.The evolution of the average force per unit width of the layer during the solid state reaction is interpreted on the basis of a phenomenological model used to describe stress evolution during silicide formation.

Phase relations in the Ba–Sr–Co–Fe–O system at 1273 K in air

2009 ◽  
Vol 42 (2) ◽  
pp. 153-160 ◽  
Author(s):  
Zhèn Yáng ◽  
Ashley S. Harvey ◽  
Anna Infortuna ◽  
Ludwig J. Gauckler
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Solid State Reaction ◽  
Room Temperature ◽  
Solid State Reaction Method ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray

Selected compositions of the Ba–Sr–Co–Fe–O system were synthesized from powders by the solid-state reaction method. Samples were equilibrated at 1273 K for 36 000 s in air. The resulting powders were characterized by X-ray diffraction (XRD) at room temperature and by high-temperaturein situXRD. The phases present in the BaxSr1−xCoyFe1−yO3−δsystem are outlined for 1273 K in air. For most of the quaternary compositions, the cubic perovskite is formed, except for the compositions withx= 1 (excludingy= 0.4),y= 1 andx,y= 0.8, where the phases mainly show hexagonal distortions, andx, y= 0, for which a predominant cubic phase is mixed with other phases.

scholarly journals Formation and structure of the first metal complexes comprising amidinoguanidinate ligands

2016 ◽  
Vol 72 (11) ◽  
pp. 1526-1531 ◽  
Author(s):  
Farid M. Sroor ◽  
Phil Liebing ◽  
Cristian G. Hrib ◽  
Daniel Gräsing ◽  
Liane Hilfert ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid State ◽  
Metal Complexes ◽  
Solid State Reaction ◽  
The Novel ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
X Ray

The first metal complexes comprising amidinoguanidinate ligands have been prepared and structurally characterized, namely bis[μ-N,N′,N′′,N′′′-tetraisopropyl-1-(1-butylamidinato)guanidinato-κ3N1,N2:N2]bis[(tetrahydrofuran)lithium], [Li2(C18H37N4)2(C4H8O)2], (2), and [bis(tetrahydrofuran)lithium]-di-μ-chlorido-{(N,N′-dicyclohexyl-1-butylamidinato-κ2N1,N2)[N,N′,N′′,N′′′-tetracyclohexyl-1-(1-butylamidinato)guanidinato-κ2N1,N2]holmate(III)}, [HoLiCl2(C4H8O)2(C17H31N2)(C30H53N4)], (3). The novel lithium amidinoguanidinate precursors Li[nBuC(=NR)(NR)C(NR)2] [1:R= Cy (cyclohexyl),2:R=iPr) were obtained by treatment ofN,N′-diorganocarbodiimides,R—N=C=N—R(R=iPr, Cy), with 0.5 equivalents ofn-butyllithium under well-defined reaction conditions. An X-ray diffraction study of2revealed a ladder-type dimeric structure in the solid state. Reaction of anhydrous holmium(III) chloride within situ-prepared2afforded the unexpected holmium `ate' complex [nBuC(=NCy)(NCy)C(NCy)2]Ho[nBuC(NCy)2](μ-Cl)2Li(THF)2(3) in 71% yield. An X-ray crystal structure determination of3showed that this complex contains both an amidinate ligand and the new amidinoguanidinate ligand.

On the Solid-State Isomerization of Terpinolene Tetrabromide

2010 ◽  
Vol 63 (3) ◽  
pp. 458
Author(s):  
Paul V. Bernhardt ◽  
Raymond M. Carman ◽  
Tri T. Le
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Bulk Material ◽  
Solution Nmr ◽  
X Ray Diffraction ◽  
In Situ Characterization ◽  
Compound A ◽  
X Ray

The isomerization of terpinolene tetrabromide from the cis-2,4- (diaxial) dibromo isomer (A) to the more stable trans-2,4- (equatorial–axial) compound (B) has been investigated in the solid state. The progress of the solid-state reaction as a function of time was followed by solution NMR analysis, and, more effectively, by micropowder X-ray diffraction of the bulk material in situ. Characterization of the solid-state reaction mixture is facilitated by the existence of X-ray crystal structures of both compounds A (monoclinic) and B (reported previously) in addition to a new triclinic polymorph of compound A reported herein, all three forms being observed by powder X-ray diffraction.

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