Charge Carrier Transport in a-Si:H/a-SiC:H Heterojunction with Blocking Layer

This paper presents a one-dimensional numerical simulation of the charge carrier transport and photogeneration within a p-i-n (a-Si:H) homojunction and a p(a-SiC:H)/i (a-Si:H)/n (a-SiC:H) heterojunction with weakly-doped n-layers. A good matching between the simulated J-V characteristics and the corresponding experimental curves has been achieved for both configurations. By analysing the simulated band diagrams, electric fielddistributions, the electron and hole current densities, and the free carrier population profiles we conclude that in short-circuit mode the carrier transport is different in the homojunction and heterojunction due to band offsets.