Influence of Preparation Conditions on Charge Carrier Dynamics In a-Si:H Determined By An In-Siju Technique

Carrier Dynamics ◽

Discharge Process ◽

High Quality ◽

Time Resolved ◽

Preparation Conditions ◽

Charge Carrier Dynamics ◽

ABSTRACTContactless photoconductivity measurements with the time-resolved microwave conductivity technique have been performed during the growth of hydrogenated amorphous silicon films. it has been shown that low substrate temperature and thin films lead to a larger electron decay rate and to an increased infrared absorption compared with high quality films. Addition of H2S to SiH4 during the glow discharge process leads to a worse fi1m quality which can be detected in-situ.

Investigation of intrinsic hydrogenated amorphous silicon (a-Si:H) thin films on textured silicon substrate with high quality passivation

2017 China Semiconductor Technology International Conference (CSTIC) ◽

10.1109/cstic.2017.7919801 ◽

2017 ◽

Author(s):

Min-Lun Yu ◽

Yu-Lin Hsieh ◽

Sheng-Kai Jou ◽

Tomi T. Li ◽

Chien-Chieh Lee

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Silicon Substrate ◽

High Quality ◽

Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources

MRS Proceedings ◽

10.1557/proc-219-697 ◽

1991 ◽

Vol 219 ◽

Author(s):

K. Gaughan ◽

S. Hershgold ◽

J. M. Viner ◽

P. C. Taylor

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Wide Band ◽

Discharge Process ◽

Wide Band Gap ◽

Silicon Carbon ◽

Rf Glow Discharge ◽

ABSTRACTThe uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap (E04 3 ≈ eV) a-SiC:H.

(Invited) In Situ Time-Resolved Probe of Charge Carrier Dynamics at Planar Semiconductor Photoelectrode/Liquid Interface

ECS Meeting Abstracts ◽

10.1149/ma2021-01391250mtgabs ◽

2021 ◽

Vol MA2021-01 (39) ◽

pp. 1250-1250

Author(s):

Tianquan Lian

Keyword(s):

Charge Carrier ◽

Carrier Dynamics ◽

Liquid Interface ◽

Time Resolved ◽

Charge Carrier Dynamics

High Quality Hydrogenated Amorphous Silicon Thin Films with Enhanced Growth Rates for Surface Passivation in an Al2O3 Based ICP Reactor

Procedia Engineering ◽

10.1016/j.proeng.2015.09.216 ◽

2016 ◽

Vol 139 ◽

pp. 56-63 ◽

Cited By ~ 1

Author(s):

J.W.M. Lim ◽

C.S. Chan ◽

L. Xu ◽

T.M. Ong ◽

S.Y. Huang ◽

...

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Growth Rates ◽

Surface Passivation ◽

High Quality ◽

Silicon Thin Films ◽

A Particular Photo-CVD Apparatus for Hydrogenated Amorphous Silicon Deposition

MRS Proceedings ◽

10.1557/proc-258-165 ◽

1992 ◽

Vol 258 ◽

Author(s):

C. Manfredotti ◽

F. Fizzotti ◽

C. Osenga ◽

M. Boero ◽

V. Rigato ◽

...

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Deposition Chamber ◽

Amorphous Thin Films ◽

Lock Chamber ◽

Hydrogenated Amorphous ◽

Deposited Films

ABSTRACTA new PHOTO-CVD apparatus has been built in order to deposit a – Si : H films and other kinds of amorphous thin films by a technique which is both simple and versatile. This apparatus is composed of three chambers connected together: a load-lock chamber, a process chamber and a third chamber for in-situ analysis of deposited films. A peculiarity of the lamp, a dielectric discharge lamp which can work with noble gases like Xe or Kr, is that it can be completely dismounted without breaking the vacuum in order to clean the optical MgF2 window. By this method, the deposition chamber can be kept in very clean conditions. In this apparatus, we started to deposit a – SixC1−x: H of very good quality, taking their thickness into account. These films have been completely characterized by chemical (RBS, ERDA) and optical (PDS) methods. Their quality can be compared with quality of a – Si : H samples of the same thickness obtained by PECVD.

Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVD

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2006.02.020 ◽

2006 ◽

Vol 352 (9-20) ◽

pp. 1416-1420 ◽

Cited By ~ 3

Author(s):

B.P. Swain ◽

T.K. Gundu Rao ◽

R.O. Dusane

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Time Resolved ◽

Silicon Carbon ◽

Carbon Thin Films ◽

Hydrogenated Amorphous ◽

Time Resolved Photoluminescence

Influence of light‐induced defects in hydrogenated amorphous silicon on charge carrier dynamics

Applied Physics Letters ◽

10.1063/1.95856 ◽

1985 ◽

Vol 46 (1) ◽

pp. 69-70 ◽

Cited By ~ 9

Author(s):

A. Werner ◽

M. Kunst

Keyword(s):

Charge Carrier ◽

Amorphous Silicon ◽

Carrier Dynamics ◽

Charge Carrier Dynamics ◽

Induced Defects ◽

In Situ IR Absorption Study of H Bonding in a-Si:H Thin Films

MRS Proceedings ◽

10.1557/proc-219-295 ◽

1991 ◽

Vol 219 ◽

Cited By ~ 6

Author(s):

M. Katiyar ◽

G. F. Feng ◽

J. R. Abelson ◽

N. Maley

Keyword(s):

Thin Films ◽

Reflectance Spectroscopy ◽

Ir Absorption ◽

Infrared Reflectance ◽

Absorption Study ◽

In Situ Ir ◽

Dc Magnetron Reactive Sputtering ◽

ABSTRACTWe have used real time, in situ infrared reflectance spectroscopy to study the evolution of Si-H bonding during the growth of hydrogenated amorphous silicon (a-Si:H) by dc magnetron reactive sputtering. The surface Si-H stretching mode (2100 cm-l) is observed in films 5 Å thick and the 2000 cm-l mode, which has been attributed to isolated monohydrides in the bulk, appears for thickness (d) < 10–15 Å For larger thicknesses the intensity of both modes increases approximately linearly. These trends are interpreted in terms of the nucleation and coalescence of islands for d> 15 Å followed by bulk-like growth.