Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVD

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1416-1420 ◽  
Author(s):  
B.P. Swain ◽  
T.K. Gundu Rao ◽  
R.O. Dusane
1991 ◽  
Vol 219 ◽  
Author(s):  
K. Gaughan ◽  
S. Hershgold ◽  
J. M. Viner ◽  
P. C. Taylor

ABSTRACTThe uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap (E04 3 ≈ eV) a-SiC:H.


2000 ◽  
Vol 62 (3) ◽  
pp. 1532-1535 ◽  
Author(s):  
Kwang Soo Seol ◽  
Takashi Watanabe ◽  
Makoto Fujimaki ◽  
Hiromitsu Kato ◽  
Yoshimichi Ohki ◽  
...  

1992 ◽  
Vol 258 ◽  
Author(s):  
R.M. Dawson ◽  
Y.M. Li ◽  
M. Gunes ◽  
D. Heller ◽  
S. Nag ◽  
...  

ABSTRACTThe optical properties of solar cell grade hydrogenated amorphous silicon (a-Si:H), silicon germanium (a-SiGe:H) and silicon carbon (a-SiC:H) alloy thin films have been investigated over a wide photon energy range (0.8–4.8 eV) using a combination of subgap photoconductivity, reflection and transmission, and spectroscopie ellipsometry techniques in order to obtain accurate optical functions for solar cell modelling. Studies on films with thicknesses ranging from a few hundred Å to a few microns show that the optical spectra obtained by the different techniques agree closely over the energy ranges of overlap and display no thickness dependence from the Urbach tail energies and above. Thus, the results appear to be free of measurement and sample related artifacts. Three different methods provide a common value for the optical gap within ±0.02 eV and the result for a-Si:H is ∼0.1 eV below the mobility gap.


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