Femtosecond Laser-induced Crystallization in As-deposited Ge1Sb2Te4 Films
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ABSTRACTTime resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge1Sb2Te4 films. With an average fluence of 24mJ/cm2 a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.
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2019 ◽
Vol 1421
◽
pp. 012001
2019 ◽
Vol 33
(08)
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pp. 1950061
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2012 ◽
Vol 2012.17
(0)
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pp. 103-104
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